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參數(shù)資料
| 型號： | DDA113TU |
| 廠商： | Diodes Inc. |
| 英文描述： | PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 進步黨預(yù)偏置信號小的SOT - 363雙表面貼裝晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 102K |
| 代理商： | DDA113TU |
DS30346 Rev. 7 - 2
2 of 6
DDA (xxxx) U
www.diodes.com
Characteristic
Symbol
Min
-0.5
-0.5
-0.3
-0.5
-0.5
Typ
-1.1
-1.1
Max
Unit
Test Condition
Input Voltage
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
V
l(off)
-1.1
-1.9
-1.9
V
V
CC
= -5V, I
O
= -100 A
V
l(on)
1.9
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -2mA
V
O
= -0.3, I
O
= -1mA
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -10mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -10mA / -0.5mA
Output Voltage
V
O(on)
-0.1
-0.3
V
Input Current
I
l
-0.36
-0.18
-0.88
-3.6
-0.88
-0.5
mA
V
I
= -5V
Output Current
I
O(off)
A
V
CC
= -50V, V
I
= -0V
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
DC Current Gain
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
G
l
56
68
68
80
30
-30
-20
Input Resistor (R
1
) Tolerance
Resistance Ratio Tolerance
R
1
+30
+20
%
R
2
/R
1
Gain-Bandwidth Product*
f
T
250
MHz
V
= -10V, I
E
= -5mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
N
* Transistor - For Reference Only
Characteristic (DDA113TU & DDA143TU &
DDA114TU only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Min
Typ
Max
Unit
Test Condition
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
-50
-50
-5
V
V
V
A
A
I
C
= -50 A
I
C
= -1mA
I
E
= -50 A
V
CB
= -50V
V
EB
= -4V
-0.5
-0.5
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3
V
I
C
/I
B
= -2.5mA / -0.25mA
I
C
/I
B
= -1mA / -0.1mA DDA114TU
I
C
/I
B
= -10mA / -1mA DDA113TU
I
C
= -1mA, V
CE
= -5V
DDA143TU
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
h
FE
R
1
f
T
100
-30
250
600
+30
%
250
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DDA113TU-7-F | PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| DDA114EU-7-F | PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| DDA114TU-7-F | PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| DDA114YU-7-F | PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
| DDA123JU-7-F | PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DDA113TU-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 1K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDA113TU-7-F | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 1K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDA114EH | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
| DDA114EH-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 150MW 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDA114EH-7-F | 制造商:Diodes Incorporated 功能描述:TRANS DGTL BJT PNP 100MA 6PIN SOT-563 - Tape and Reel |
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