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參數(shù)資料
| 型號： | DD231N |
| 英文描述： | SCR / Diode Modules |
| 中文描述： | SCR /二極管模塊 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 219K |
| 代理商： | DD231N |
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD231N
BIP AC / 91-08-29, Spec
A12/91
1/9
Seite/page
Stospitzensperrspannung
non-repetitive peak reverse voltage
DD231N
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
T
vj
= -40°C... T
vj max
V
RRM
2000
2400
2200
2600
V
V
T
vj
= +25°C... T
vj max
V
RSM
2100
2500
2300
2700
V
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
I
FRMSM
410 A
Dauergrenzstrom
average on-state current
T
C
= 100°C
T
C
=
91°C
I
FAVM
231
261
A
A
Stostrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
7.500
6.400
A
A
Grenzlastintegral
I2t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I2t
281.000
205.000
A2s
A2s
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
F
= 800 A
v
F
max.
1,55 V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,8 V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
0,84 m
Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
i
R
max.
25 mA
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
V
ISOL
3,6
3,0
kV
kV
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin
pro Zweig / per arm,
Θ
= 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
R
thJC
max.
max.
max.
max.
0,085
0,170
0,082
0,164
°C/W
°C/W
°C/W
°C/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
pro Zweig / per arm
R
thCH
max.
max.
0,02
0,04
°C/W
°C/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj max
150 °C
Betriebstemperatur
operating temperature
T
c op
- 40...+150 °C
Lagertemperatur
storage temperature
T
stg
- 40...+150 °C
prepared by: C. Drilling
date of publication:
30.04.03
approved by: M. Leifeld
revision:
1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DD231N20K | 功能描述:分立半導體模塊 2000V 410A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
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