參數(shù)資料
型號： DCX4710H
廠商： Diodes Inc.
英文描述： 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
中文描述： 100mA的雙互補預(yù)偏置三極管
文件頁數(shù)： 3/8頁
文件大小： 142K
代理商： DCX4710H
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (gain bandwidth product)
f
T
200
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Collector capacitance (Ccbo-Output
Capacitance)
C
C
5
pF
V
CB
= -10V, I
E
= 0A,
f = 1MHz
DS30871 Rev. 3 - 2
3 of 8
DCX4710H
www.diodes.com
N
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
( Continued )
Pre-Biased NPN Transistor (Q2)
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
s
OFF CHARACTERISTICS
Collector-Base Cut Off Current
I
CBO
100
nA
V
CB
= 50V, I
E
= 0
Collector-Emitter Cut Off Current
I
CEO
1
A
V
CE
= 50V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
500
A
V
EB
= 5V, I
C
= 0
Collector-Base Breakdown Voltage
V
(BR) CBO
50
V
I
C
= 10 A, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR) CEO
50
V
I
C
= 2 mA, I
B
= 0
Output Off Voltage
V
OH
4.6
V
V
CC
= 5V, V
B
= 0.05V,
R
L
= 1K
Input Off Voltage
V
I(OFF)
1.2
0.8
V
V
CE
= 5V, I
C
= 100 A
Ouput Current
I
O (OFF)
1
A
V
CC
= 50V, V
I
= 0V
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
V
CE (SAT)
0.06
0.1
0.1
V
I
C
= 5 mA, I
B
= 0.25 mA
0.06
I
C
= 10mA, I
B
= 0.5mA
0.042
0.06
I
C
= 10mA, I
B
= 1mA
0.026
0.04
I
C
= 10mA, I
B
= 5mA
0.272
0.35
I
C
= 100mA, I
B
= 5mA
0.28
0.35
I
C
= 100mA, I
B
= 10mA
Equivalent on-resistance*
R
CE (SAT)
3.5
I
C
= 100mA, I
B
= 10mA
DC Current Gain
h
FE
12
V
CE
= 5V, I
C
= 1 mA
45
V
CE
= 5V, I
C
= 5 mA
130
V
CE
= 5V, I
C
= 50 mA
70
V
CE
= 5V, I
C
= 100 mA
40
58
V
CE
= 10V, I
C
= 5 mA
Output On Voltage
V
OL
0.12
0.2
V
V
CC
= 5V, V
B
= 2.5V,
R
L
= 1K
Input On Voltage
V
I (ON)
2.8
1.6
V
V
O
= 0.3V, I
C
= 2 mA
Input Current
I
i
0.88
mA
V
I
= 5V
Base-Emitter Turn-on Voltage
V
BE(ON)
1.195
V
V
CE
= 5V, I
C
= 100 A
Base-Emitter Saturation Voltage
V
BE(SAT)
1.02
V
I
C
= 1mA, I
B
= 50 A
Input Resistor +/- 30% (Base)
R1
7
10
13
K
Resistor Ratio
(R2/R1)
0.8
1
1.2
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
(Gain bandwidth product)
f
T
250
MHz
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
Collector capacitance (Ccbo-Output
Capacitance)
C
C
4
pF
V
CB
= 10V, I
E
= 0A,
f = 1MHz
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DCX4710H_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
DCX4710H-7 功能描述:開關(guān)晶體管 - 偏壓電阻器 PREBIASED TRANSISTOR SOT-563 150MW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DCX51 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR
DCX51-13 功能描述:兩極晶體管 - BJT 1000W -45Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DCX51-16-13 功能描述:兩極晶體管 - BJT 1000W -45Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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