| 型號 | 廠商 | 描述 |
| jantx1n5524d-1 2 3 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5524dtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5524dur-1 2 3 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5524durtr-1 2 3 |
Microsemi Corporation | Tantalum Hermetically Sealed / Axial ?÷ MIL-PRF-39003 / T110 Series ?÷ Polar Type, T212 (CSR13); Capacitance [nom]: 0.033uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Tantalum, Solid, Hermetic; Lead Style: Axial Leaded; Termination: Standard; Body Dimensions: 0.135" x 0.286"; Temperature Range: -55C to +125C; Container: Box; Qty per Container: 150; Features: MIL-PRF-39003: M Failure Rate |
| jantx1n5524tr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5524ur-1 2 3 |
MICROSEMI CORP-IRELAND | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5524urtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5525cur-1 2 3 |
MICROSEMI CORP-IRELAND | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5525curtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5525d-1 2 3 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5525dtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5525dur-1 2 3 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5525durtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5525ur-1 2 3 |
MICROSEMI CORP-IRELAND | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5525urtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5526a-1 2 3 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5526atr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5526dur-1 2 3 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5526durtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5526ur-1 2 3 |
MICROSEMI CORP | Tantalum Hermetically Sealed / Axial ?÷ MIL-PRF-39003 / T110 Series ?÷ Polar Type, T212 (CSR13); Capacitance [nom]: 3.3uF; Working Voltage (Vdc)[max]: 15V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid, Hermetic; Lead Style: Axial Leaded; Termination: Standard; Body Dimensions: 0.135" x 0.286"; Temperature Range: -55C to +125C; Container: Box; Qty per Container: 150; Features: MIL-PRF-39003: D Failure Rate |
| jantx1n5526urtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5527-1 2 3 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5527a-1 2 3 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5527atr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5527aur-1 2 3 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5527aurtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5527b-1 2 3 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528atr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528aur-1 2 3 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528aurtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528b-1 2 3 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528btr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528bur-1 2 3 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528burtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528c-1 2 3 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528curtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5528d-1 2 3 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529bur-1 2 3 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529burtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529c-1 2 3 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529ctr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529cur-1 2 3 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529curtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529d-1 2 3 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529dtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529dur-1 2 3 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529durtr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5529tr-1 2 3 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5532c-1 2 3 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jantx1n5532ctr-1 2 3 |
Microsemi Corporation | Tantalum Hermetically Sealed / Axial ?÷ MIL-PRF-39003 / T110 Series ?÷ Polar Type, T212 (CSR13); Capacitance [nom]: 4.7uF; Working Voltage (Vdc)[max]: 10V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid, Hermetic; Lead Style: Axial Leaded; Termination: Standard; Body Dimensions: 0.135" x 0.286"; Temperature Range: -55C to +125C; Container: Box; Qty per Container: 150; Features: MIL-PRF-39003: D Failure Rate |