| 型號(hào) | 廠商 | 描述 |
| jan1n5419 2 |
MICROSEMI CORP | RECTIFIERS |
| jan1n5420 2 |
MICROSEMI CORP-IRELAND | RECTIFIERS |
| jan1n5519dur 2 |
MICROSEMI CORP | surface mount silicon Zener diodes |
| jan1n5526-1 2 |
MICROSEMI CORP-LAWRENCE | surface mount silicon Zener diodes |
| jan1n5537dur 2 |
MICROSEMI CORP | surface mount silicon Zener diodes |
| jan1n5518d-1 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5519b-1 2 |
MICROSEMI CORP-SCOTTSDALE | Octal buffer/line driver; 3-state; inverting - Description: Octal Buffer/Line Driver; Inverting; TTL Enabled (3-State) ; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/= 6 mA ; Power dissipation considerations: Low Power ; Propagation delay: 11 ns; Voltage: 4.5-5.5 V |
| jan1n5519btr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519bur 2 |
MICROSEMI CORP | surface mount silicon Zener diodes |
| jan1n5519bur-1 2 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519burtr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519c 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5519c-1 2 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519ctr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519cur 2 |
MICROSEMI CORP | surface mount silicon Zener diodes |
| jan1n5519cur-1 2 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519curtr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519d 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5519d-1 2 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519dtr-1 2 |
Microsemi Corporation | Octal D-type flip-flop; positive edge-trigger; 3-state - Description: Octal D-Type Flip-Flop; TTL Enabled ; F<sub>max</sub>: 76 MHz; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/- 6 mA ; Power dissipation considerations: Low Power ; Propagation delay: 15 ns; Voltage: 4.5-5.5 V |
| jan1n5519dur-1 2 |
MICROSEMI CORP-SCOTTSDALE | Octal D-type flip-flop; positive edge-trigger; 3-state - Description: Octal D-Type Flip-Flop; TTL Enabled ; F<sub>max</sub>: 76 MHz; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/- 6 mA ; Power dissipation considerations: Low Power ; Propagation delay: 15 ns; Voltage: 4.5-5.5 V |
| jan1n5519durtr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5519tr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5530 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5530-1 2 |
MICROSEMI CORP-SCOTTSDALE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5530a 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5530a-1 2 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5530atr-1 2 |
Microsemi Corporation | Octal Schmitt trigger buffer/line driver; 3-state - Description: Octal Schmitt-Trigger Buffer/Line Driver; Non-Inverting; TTL Enabled (3-State) ; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/- 6 mA ; Power dissipation considerations: Low Power ; Propagation delay: 16 ns; Voltage: 4.5-5.5 V |
| jan1n5530aur 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5530aur-1 2 |
MICROSEMI CORP-IRELAND | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5540cur-1 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5540curtr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5540d 2 |
MICROSEMI CORP-SCOTTSDALE | Quad 2-input NAND Schmitt-trigger |
| jan1n5540d-1 2 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5526b-1 2 |
MICROSEMI CORP-SCOTTSDALE | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 0.68uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: X7R; Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.400" x 0.460" x 0.200"; Container: Bag; Qty per Container: 100 |
| jan1n5526btr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5526bur 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5526bur-1 2 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5526burtr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5526c 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5526c-1 2 |
MICROSEMI CORP-LAWRENCE | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5526ctr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5526cur 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5526cur-1 2 |
MICROSEMI CORP-SCOTTSDALE | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 0.68uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: Z5U; Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.400" x 0.460" x 0.200"; Container: Bag; Qty per Container: 100 |
| jan1n5526curtr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5526d 2 |
MICROSEMI CORP-SCOTTSDALE | surface mount silicon Zener diodes |
| jan1n5526d-1 2 |
MICROSEMI CORP | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| jan1n5526dtr-1 2 |
Microsemi Corporation | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 0.68uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: X7R; Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.400" x 0.460" x 0.200"; Container: Bag; Qty per Container: 100 |
| jan1n5526dur-1 2 |
MICROSEMI CORP | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 750pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.400" x 0.460" x 0.200"; Container: Bag; Qty per Container: 100 |
| jan1n5526durtr-1 2 |
Microsemi Corporation | Low Voltage Surface Mount 500 mW Avalanche Diodes |