| 型號 | 廠商 | 描述 |
| rn1702 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn1703 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn1704 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn1705 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn1706 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn1707je 2 3 4 5 |
Toshiba Corporation | SC 22C 18#16 4#12 PIN RECP |
| rn1709je 2 3 4 5 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
| rn1707 2 3 4 5 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn1709 2 3 4 5 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn1708 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn1708je 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
| rn1710je 2 3 4 5 6 |
Toshiba Corporation | Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| rn1711je 2 3 4 5 6 |
Toshiba Corporation | Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| rn1907 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| rn1908 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| rn1909 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| rn1961fe 2 3 4 |
Toshiba Corporation | CONNECTOR ACCESSORY |
| rn1963fe 2 3 4 |
Toshiba Corporation | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| rn1961 2 3 4 |
Toshiba Corporation | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| rn1963 2 3 4 |
Toshiba Corporation | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| rn2007 2 3 4 5 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2008 2 3 4 5 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2009 2 3 4 5 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2108 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| rn2109 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| rn2112ft 2 3 |
Toshiba Corporation | IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines (incl. FADC): 14; Program Memory: 128.0 KByte; |
| rn2113ft 2 3 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| rn2112 2 3 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| rn2113 2 3 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| rn2501 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2502 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2503 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2504 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2505 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2506 2 3 4 5 6 7 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2507 2 3 4 5 6 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2508 2 3 4 5 6 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2509 2 3 4 5 6 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2707 2 3 4 5 6 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2708 2 3 4 5 6 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2709 2 3 4 5 6 |
Toshiba Corporation | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| rn2907 2 3 4 5 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| rn2907fe 2 3 4 5 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| rn2908 2 3 4 5 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| rn2908fe 2 3 4 5 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| rn2909 2 3 4 5 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| rn2909fe 2 3 4 5 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| rn2910 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| rn2911 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| rn4605 2 3 4 5 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |