| 型號 | 廠商 | 描述 |
| ndb6060l 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndp6060 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb6060 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp610be 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor(24A,100V,0.080Ω)(N溝道增強型MOS場效應(yīng)管(漏電流24A, 漏源電壓100V,導(dǎo)通電阻0.080Ω)) |
| ndb610a 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb610ae 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb610b 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb610be 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp610ae 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp610a 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp610b 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp7051l 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndb7051l 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndp7051 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb7051 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp7052l 2 3 4 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndb7052l 2 3 4 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndp7052 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb7052 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp7060l 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndb7060l 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndp7061l 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndb7061l 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| ndp7061 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb7061 2 3 4 5 6 7 8 9 10 11 12 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp708a 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp708ae 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp708b 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndp708be 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb708a 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb708ae 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb708b 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| ndb708be 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor |
| nds0605 2 3 4 5 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Enhancement Mode Field Effect Transistor(-0.18A,-60V,5Ω)(P溝道增強型MOS場效應(yīng)管(漏電流-0.18A, 漏源電壓-60V,導(dǎo)通電阻5Ω)) |
| nds331 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| nds331n 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| nds332 2 3 4 5 6 |
Fairchild Semiconductor Corporation | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| nds332p 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| nds335 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| nds335n 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| nds336p 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.2A,-20V,0.27Ω)(P溝道邏輯增強型MOS場效應(yīng)管(漏電流-1.2A, 漏源電壓-20V,導(dǎo)通電阻0.27Ω)) |
| nds336 2 3 4 5 6 |
Fairchild Semiconductor Corporation | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| nds351an 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.2A,30V,0.25Ω)(N溝道邏輯增強型MOS場效應(yīng)管(漏電流1.2A, 漏源電壓30V,導(dǎo)通電阻0.25Ω)) |
| nds351n 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.1A,30V,0.25Ω)(N溝道邏輯增強型MOS場效應(yīng)管(漏電流1.1A, 漏源電壓30V,導(dǎo)通電阻0.25Ω)) |
| nds352ap 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.9A,-30V,0.5Ω)(P溝道邏輯增強型MOS場效應(yīng)管(漏電流-0.9A, 漏源電壓-30V,導(dǎo)通電阻0.5Ω)) |
| nds352p 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.85A,-20V,0.5Ω)(P溝道邏輯增強型MOS場效應(yīng)管(漏電流-0.85A, 漏源電壓-20V,導(dǎo)通電阻0.5Ω)) |
| nds355an 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.7A,30V,0.125Ω)(N溝道邏輯增強型MOS場效應(yīng)管(漏電流1.7A, 漏源電壓30V,導(dǎo)通電阻0.125Ω)) |
| nds355n 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.6A,30V,0.125Ω)(N溝道邏輯增強型MOS場效應(yīng)管(漏電流1.6A, 漏源電壓30V,導(dǎo)通電阻0.125Ω)) |
| nds356ap 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A,-30V,0.3Ω)(P溝道邏輯增強型MOS場效應(yīng)管(漏電流-1.1A, 漏源電壓-30V,導(dǎo)通電阻0.3Ω)) |
| nds356 2 3 4 5 6 |
Fairchild Semiconductor Corporation | P-Channel Logic Level Enhancement Mode Field Effect Transistor |