型號(hào) 廠商 描述
q62702-c2325
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SIEMENS AG PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
q62702-c2326
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SIEMENS AG PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
q62702-c2327
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
q62702-c2328
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
q62702-c2329
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
q62702-c2330
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
q62702-c2335
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2337
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2338
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2339
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SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
q62702-c2340
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SIEMENS AG PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2354
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2355
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2356
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2370
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit)
q62702-c2371
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2372
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
q62702-c2373
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2374
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2375
2 3 4 5 6 7 8 9 10 11
SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate
q62702-c2376
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2377
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2378
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drivere circuit)
q62702-c2382
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c2383
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
q62702-c252
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SIEMENS AG PNP SILICON TRANSISTORS
q62702-c2529
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SIEMENS AG NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
q62702-c2532
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
q62702-c2537
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
q62702-c254
2 3 4 5 6 7 8 9 10 11
SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
q62702-c2592
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor (For AF driver and output stages High collector current)
q62702-c2593
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor (For AF driver and output stages High collector current)
q62702-c2594
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistor (For AF driver and output stages High collector current)
q62702-c2595
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon AF Transistors (For AF driver and output stages High collector current)
q62702-c2596
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Power Transistor (For AF driver and output stages High collector current)
q62702-c2597
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SIEMENS AG NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)
q62702-c26
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SIEMENS AG PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
q62702-c2606
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon AF Transistors (For AF driver and output stages High collector current)
q62702-c2607
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon AF Transistors (For AF driver and output stages High collector current)
q62702-c303
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP SILICON TRANSISTORS
q62702-c310
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SIEMENS AG PNP SILICON TRANSISTOR
q62702-c311
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
q62702-c312
2 3 4 5 6 7 8 9 10 11
SIEMENS AG PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
q62702-c313
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
q62702-c314
2 3 4 5 6 7 8 9 10 11
SIEMENS AG NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
q62702-c821
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SIEMENS AG PNP SILICON AF TRANSISTORS
q62702-c825
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SIEMENS AG NPN Silicon Darlington Transistor (High current gain High collector current)
q62702-c856
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SIEMENS AG NPN SILICON AF TRANSISTORS
q62702-c905
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SIEMENS AG PNP Silicon AF Transistors
q62702-c944
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SIEMENS AG Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate