| 型號(hào) | 廠商 | 描述 |
| q62702-c2325 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
| q62702-c2326 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
| q62702-c2327 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
| q62702-c2328 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
| q62702-c2329 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
| q62702-c2330 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
| q62702-c2335 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c2337 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2338 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2339 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| q62702-c2340 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2354 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2355 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2356 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2370 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit) |
| q62702-c2371 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2372 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |
| q62702-c2373 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c2374 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c2375 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
| q62702-c2376 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2377 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2378 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drivere circuit) |
| q62702-c2382 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c2383 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
| q62702-c252 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
| q62702-c2529 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |
| q62702-c2532 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| q62702-c2537 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |
| q62702-c254 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 68pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| q62702-c2592 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| q62702-c2593 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| q62702-c2594 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| q62702-c2595 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| q62702-c2596 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) |
| q62702-c2597 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
| q62702-c26 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
| q62702-c2606 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| q62702-c2607 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| q62702-c303 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTORS |
| q62702-c310 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON TRANSISTOR |
| q62702-c311 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| q62702-c312 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| q62702-c313 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| q62702-c314 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| q62702-c821 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP SILICON AF TRANSISTORS |
| q62702-c825 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN Silicon Darlington Transistor (High current gain High collector current) |
| q62702-c856 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | NPN SILICON AF TRANSISTORS |
| q62702-c905 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | PNP Silicon AF Transistors |
| q62702-c944 2 3 4 5 6 7 8 9 10 11 |
SIEMENS AG | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 680pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |