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參數(shù)資料
| 型號(hào)： | DAT114EKA |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | Digital transistors(built-in resistor) |
| 中文描述： | 數(shù)字晶體管（內(nèi)置電阻） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | DAT114EKA |
LESHAN RADIO COMPANY, LTD.
P3–1/2
Features
1) Built-in bias resistors enable the configuration of an inverter cir-
cuit without connecting external input resistors (see equivalent
circuit).
2) The bias resistors consist of thinfilm resistors with complete
isolation to allow positive biasing of the input. They also have the
advantage of almost completely eliminat-ing parasitic effects.
3) Only the on/off conditions need to be set for operation, making
device design easy.
Structure
PNP digital transistor ( Built-in resistors)
Equivalent circuit
DTA114EKA
Elecrical characteristics(T
a
=25°C)
Parameter
symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/ R
1
f
T
Min.
—
– 3
—
—
—
30
7
0.8
—
Typ.
—
—
—
—
—
—
10
1
250
Max.
–0.5
—
–0.3
–0.88
–0.5
—
13
1.2
—
Unit
Conditions
V
CC
= – 5V,I
O
= –100
μ
A
V
O
= – 0.3V,I
O
= –10 mA
I
O
/ I
I
= –10mA / –0.5mA
V
I
= – 5V
V
CC
= – 50 V,V
I
= 0 V
V
O
= – 5V,I
O
= –5mA
—
—
V
CE
= –10V, I
E
= 5 mA,f =100MHz*
Input voltage
V
Output Voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
*Transition frequency of the device
V
mA
μ
A
—
K
—
MHz
Absolute maximum ratings(T
a
=25
°C)
Parameter
symbol
limits
unit
Supply voltage
Input voltage
V
cc
V
IN
I
O
I
C(Max.)
P
d
T
j
T
stg
–50
V
V
–40~+10
–50
–100
200
150
–55~+150
Output current
mA
Power dissipation
Junction temperature
Storage temperature
mW
°C
°C
Digital transistors (built-in resistors)
OUT
GND(+)
OUT
R1
R2
GND(+)
IN
IN
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(1)
(2)
(3)
+
1
-
0.4
+ 0.1
0.15
+ 0.1
1.1
+ 0.2
0.8 + 0.1
0 ~ 0.1
0
(1) GND
(2) IN
(3) OUT
All terminals have same dimensions
EIAJ: SC— 59
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