參數(shù)資料
型號: DAC8562FSZ
廠商: Analog Devices Inc
文件頁數(shù): 10/16頁
文件大小: 0K
描述: IC DAC 12BIT PARALLEL 5V 20SOIC
產(chǎn)品培訓(xùn)模塊: Data Converter Fundamentals
DAC Architectures
標(biāo)準(zhǔn)包裝: 37
設(shè)置時(shí)間: 16µs
位數(shù): 12
數(shù)據(jù)接口: 并聯(lián)
轉(zhuǎn)換器數(shù)目: 1
電壓電源: 單電源
功率耗散(最大): 30mW
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 20-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 20-SOIC W
包裝: 管件
輸出數(shù)目和類型: 1 電壓,單極;1 電壓,雙極
采樣率(每秒): 62.5k
產(chǎn)品目錄頁面: 786 (CN2011-ZH PDF)
WAFER TEST LIMITS
Parameter
Symbol
Condition
Min
Typ
Max
Units
STATIC PERFORMANCE
Relative Accuracy
INL
–1
±3/4
+1
LSB
Differential Nonlinearity
DNL
No Missing Codes
–1
±3/4
+ 1
LSB
Zero-Scale Error
VZSE
Data = 000H
+1/2
+3
LSB
Full-Scale Voltage
VFS
Data = FFFH
4.085
4.095
4.105
V
Reference Output Voltage
VREF
2.490
2.500
2.510
V
LOGIC INPUTS
Logic Input Low Voltage
VIL
0.8
V
Logic Input High Voltage
VIH
2.4
V
Input Leakage Current
IIL
10
A
SUPPLY CHARACTERISTICS
Positive Supply Current
IDD
VIH = 2.4 V, VIL = 0.8 V
3
6
mA
VIL = 0 V, VDD = +5 V
0.6
1
mA
Power Dissipation
PDISS
VIH = 2.4 V, VIL = 0.8 V
15
30
mW
VIL = 0 V, VDD = +5 V
35mW
Power Supply Sensitivity
PSS
V
DD = ± 5%
0.002
0.004
%/%
NOTE
1Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
CAUTION
ESD (electrostatic discharge) sensitive device. The digital control inputs are diode protected;
however, permanent damage may occur on unconnected devices subject to high energy electrostatic
fields. Unused devices must be stored in conductive foam or shunts. The protective foam should be
discharged to the destination socket before devices are inserted.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS*
VDD to DGND and AGND . . . . . . . . . . . . . . . . –0.3 V, +10 V
Logic Inputs to DGND . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V
VOUT to AGND . . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V
VREFOUT to AGND . . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD
IOUT Short Circuit to GND . . . . . . . . . . . . . . . . . . . . . . 50 mA
Package Power Dissipation . . . . . . . . . . . . . . (TJ max – TA)/ JA
Thermal Resistance JA
20-Pin Plastic DIP Package (P) . . . . . . . . . . . . . . . . 74
°C/W
20-Lead SOIC Package (S) . . . . . . . . . . . . . . . . . . . 89
°C/W
Maximum Junction Temperature (TJ max) . . . . . . . . . . 150
°C
Operating Temperature Range . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300
°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
1
0
1
FS
ZS
DB11–0
VOUT
t
CEW
t
DS
t
DH
DATA VALID
t
CLRW
t
S
t
S
±1 LSB
ERROR BAND
CE
CLR
Figure 2. Timing Diagram
Table I. Control Logic Truth Table
CE
CLR
DAC Register Function
H
Latched
L
H
Transparent
+
H
Latched with New Data
X
L
Loaded with All Zeros
H
+
Latched All Zeros
+ Positive Logic Transition; X Don't Care.
REV. A
–3–
(@ VDD = +5.0 V
5%, RL = No Load, TA = +25 C, applies to part number DAC8562GBC only,
unless otherwise noted)
DAC8562
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