參數(shù)資料
型號(hào): DAC1203D160HW
廠商: NXP Semiconductors N.V.
元件分類: 外設(shè)及接口
英文描述: Dual 12 bits DAC, up to 160 MHz, 2 x interpolation
封裝: DAC1203D160HW/C1<SOT841-1 (HTQFP80)|<<http://www.nxp.com/packages/SOT841-1.html<1<Always Pb-free,;DAC1203D160HW/C1<SOT841-1 (HTQFP80)|<<http://www.nxp.com/packages/SOT841
文件頁(yè)數(shù): 8/19頁(yè)
文件大?。?/td> 113K
代理商: DAC1203D160HW
DAC1203D160_2
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 14 August 2008
8 of 19
NXP Semiconductors
DAC1203D160
Dual 12 bits DAC, up to 160 MHz, 2 x interpolating
10. Characteristics
Table 5.
V
CCD
= V
CCA
= 3.0 V to 3.6 V; AGND and DGND connected together; T
amb
=
40
°
C to +85
°
C; typical values measured at
V
CCD
= V
CCA
= 3.3 V I
O(fs)
= 20 mA and T
amb
= 25
°
C; dynamic parameters measured using output schematic given in
Figure 10
; unless otherwise specified.
Symbol
Parameter
Conditions
Supplies
V
CCD
digital supply voltage
V
CCA
analog supply voltage
I
CCD
digital supply current
I
CCA
analog supply current
P
tot
total power dissipation
f
clk
= 80 MHz;
f
IOUT
= f
QOUT
= 5 MHz
Clock inputs (CLK and CLKN)
V
I(cm)
common-mode input
voltage
V
i(dif)
differential input voltage
variation
Analog outputs (IOUT, IOUTN, QOUT and QOUTN)
I
O(fs)
full-scale output current
differential outputs
R
o
output resistance
C
o
output capacitance
Digital inputs (I0 to I11, Q0 to Q11 and GAPD)
V
IL
LOW-level input voltage
V
IH
HIGH-level input voltage
I
IL
LOW-level input current
V
IL
= 0.3 V
CCD
I
IH
HIGH-level input current
V
IH
= 0.7 V
CCD
Reference voltage output (GAPOUT)
V
GAPOUT
voltage on pin GAPOUT
I
GAPOUT
current on pin GAPOUT
external voltage
V
GAPOUT
voltage variation on pin
GAPOUT
Clock timing inputs (CLK and CLKN)
f
clk
clock frequency
t
w(clk)H
HIGH clock pulse width
t
w(clk)L
LOW clock pulse width
Input timing (I0 to I11 and Q0 to Q11); see
Figure 5
t
h(i)
input hold time
t
su(i)
input set-up time
Output timing (IOUT, IOUTN, QOUT and QOUTN)
t
s
settling time
to
±
0.5 LSB
Characteristics
Min
Typ
Max
Unit
3.0
3.0
-
-
-
3.3
3.3
55
73
422
3.6
3.6
65
85
540
V
V
mA
mA
mW
-
1.65
-
V
-
1.0
-
V
4
-
150
3
20
-
-
mA
k
pF
[1]
-
[1]
-
DGND
0.7 V
CCD
-
-
-
-
5
5
0.3 V
CCD
V
CCD
-
-
V
V
μ
A
μ
A
-
-
-
1.31
1
±
133
-
-
-
V
μ
A
ppm/
°
C
-
5
5
-
-
-
80
-
-
MHz
ns
ns
1.1
1.5
-
-
3.4
+0.7
ns
ns
[1]
-
40
-
ns
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