- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378525 > DA28F016SV-075 (INTEL CORP) 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY PDF資料下載
參數(shù)資料
| 型號： | DA28F016SV-075 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 中文描述： | 1M X 16 FLASH 5V PROM, 75 ns, PDSO56 |
| 封裝： | 23.70 X 16 MM, SSOP-56 |
| 文件頁數(shù)： | 1/63頁 |
| 文件大?。?/td> | 635K |
| 代理商： | DA28F016SV-075 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁
E
7/11/97 11:03 AM 29052807.DOC
July 1997
Order Number: 290528-007
n
SmartVoltage Technology
User-Selectable 3.3V or 5V V
CC
User-Selectable 5V or 12V V
PP
n
65 ns Access Time
n
1 Million Erase Cycles per Block
n
30.8 MB/sec Burst Write Transfer Rate
n
0.48 MB/sec Sustainable Write Transfer
Rate
n
Configurable x8 or x16 Operation
n
56-Lead TSOP and SSOP Type I
Packages
n
Backwards-Compatible with 28F016SA,
28F008SA Command Set
n
Revolutionary Architecture
Multiple Command Execution
Program during Erase
Command Super-Set of the Intel
28F008SA
Page Buffer Program
n
2 μA Typical Deep Power-Down
n
32 Independently Lockable Blocks
n
State-of-the-Art 0.6 μm ETOX IV Flash
Technology
Intel’s 28F016SV 16-Mbit FlashFile memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power operation, user-selectable V
voltage and high read/program performance, the
28F016SV enables the design of truly mobile, high-performance personal computing and communications
products.
The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and
28F016SA 16-Mbit FlashFile memories), extended cycling, flexible V
and V
voltage (SmartVoltage
technology), fast program and read performance and selective block locking, provide a highly-flexible memory
component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.
The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.3V
and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor
interface. The flexible block locking option enables bundling of executable application software in a Resident
Flash Array or memory card. The 28F016SV is manufactured on Intel’s 0.6 μm ETOX IV process technology.
28F016SV
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
FlashFile MEMORY
Includes Commercial and Extended Temperature Specifications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DA28F016SV-080 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016SV-120 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016XS20 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| DA28F016XS-15 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| DA28F016XS-20 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DA28F016SV-080 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016SV-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016XS15 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| DA28F016XS-15 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| DA28F016XS20 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復。