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參數(shù)資料
| 型號(hào)： | D60VC80 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon-Twin Rectifiers |
| 中文描述： | 60 A, 800 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 172K |
| 代理商： | D60VC80 |
1
) Valid per diode – Gültig pro Diode
2
) Max. case temperature T
C
= 100 C – Max. Gehusetemperatur T
C
= 100 C
11.02.2003
1
D60 VC20 … D60 VC120
Silicon-Twin Rectifiers
Silizium-Doppeldioden
Nominal current
Nennstrom
60 A
Alternating input voltage
Eingangswechselspannung
60…800 V
Plastic case with alu-bottom
Kunststoffgehuse mit Alu-Boden
Dimensions
Abmessungen
28.5 x 28.5 x 10 [mm]
Weight approx.
Gewicht ca.
23 g
Compound has classification UL94V-0
Vergumasse UL94V-0 klassifiziert
Dimensions / Mae in mm
Standard packaging: bulk
Standard Lieferform: lose im Karton
see page 22
s. Seite 22
Recognized Product – Underwriters Laboratories Inc. File E175067
Anerkanntes Produkt – Underwriters Laboratories Inc. Nr. E175067
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
1
)
200
400
600
800
1000
1200
Surge peak reverse voltage
Stospitzensperrspannung
V
RRM
[V]
1
)
200
400
600
800
1000
1200
D60 VC20
D60 VC40
D60 VC60
D60 VC80
D60 VC100
D60 VC120
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
I
FRM
120 A
2
)
Peak forward surge current, 50 Hz half sine-wave
Stostrom für eine 50 Hz Sinus-Halbwelle
T
A
= 25 C
I
FSM
450 A
Rating for fusing – Grenzlastintegral, t < 10 ms
T
A
= 25 C
i
2
t
1000 A
2
s
Isolation voltage – Isolationsspannung
t = 1 min
V
ISO
> 2000 V
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
– 50…+150 C
– 50…+150 C
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