參數(shù)資料
型號： D18754EJ1V0DS00
廠商： NEC Corp.
英文描述： MOS FIELD EFFECT TRANSISTOR
中文描述： MOS場效應管
文件頁數(shù)： 1/8頁
文件大?。?/td> 285K
代理商： D18754EJ1V0DS00
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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
NP160N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18754EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
DESCRIPTION
The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP160N04TUG-E1-AY
Note
NP160N04TUG-E2-AY
Note
Pure Sn (Tin)
Tape 800 p/reel
TO-263-7pin (MP-25ZT) typ. 1.5 g
Note
Pb-free (This product does not contain Pb in the external electrode).
FEATURES
Super low on-state resistance
R
DS(on)
= 1.6 m
Ω
TYP. / 2.0 m
Ω
MAX. (V
GS
= 10 V, I
D
= 80 A)
High Current Rating
I
D(DC)
=
±
160 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
40
±
20
±
160
±
640
220
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25
°
C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25
°
C)
Total Power Dissipation (T
A
= 25
°
C)
Channel Temperature
V
GSS
V
I
D(DC)
A
I
D(pulse)
A
P
T1
W
P
T2
1.8
W
°
C
°
C
mJ
T
ch
175
Storage Temperature
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
Note3
T
stg
55 to
+
175
372
E
AS
I
AR
61
A
E
AR
372
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25
°
C, V
DD
= 20 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V, L = 100
μ
H
3.
R
G
= 25
Ω
, T
ch(peak)
≤
150
°
C
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
0.68
°
C/W
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
(TO-263-7pin)
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