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參數(shù)資料
| 型號(hào)： | D1083UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(4W-28V-200MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(4W-28V-200MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管（4瓦- 28V的- 200MHz的，單端）（鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管（4瓦- 28V的- 200MHz的，單端式）） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 18K |
| 代理商： | D1083UK |
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
D1083UK
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
Test Conditions
Min.
Typ.
Max.
Unit
70
1
1
7
1
0.8
13
40
20:1
60
30
2.5
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
V
DS
= 28V
P
O
= 4W
I
DQ
= 0.1A
f = 200MHz
V
DS
= 0V
V
DS
= 28V V
GS
= 0
V
DS
= 28V V
GS
= 0
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
R
THj–case
Thermal Resistance Junction – Case
Max. 2°C / W
THERMAL DATA
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