參數(shù)資料
型號(hào)： D1053UK
英文描述： Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(50W-28V-1GHz,推挽式))
中文描述： 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管（50瓦- 28V的- 1GHz的，推挽式）（鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管（50瓦- 28V的- 1GHz的，推挽式））
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 17K
代理商： D1053UK
D1053UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
70
1
1
7
1
0.8
0.1
7.5
45
20:1
60
30
2.5
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
I
D
= 10mA
V
DS
= V
GS
P
O
= 50W
V
DS
= 28V
f = 1GHz
I
DQ
= 0.8A
V
DS
= 0
V
DS
= 28V
V
DS
= 28V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
μ
A
V
mhos
V
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
Matching Between Sides
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
TOTAL DEVICE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
V
GS(th)match
G
PS
η
VSWR
C
iss
C
oss
C
rss
相關(guān)PDF資料
PDF描述
D1053UK METAL GATE RF SILICON FET
D1053 METAL GATE RF SILICON FET
D107 Previous Vectron Model Numbers
D1082UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(4W-28V-200MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(4W-28V-200MHz,單端式))
D1082UK METAL GATE RF SILICON FET
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