參數(shù)資料
型號： D1014UK
廠商： SEMELAB LTD
元件分類： 功率晶體管
英文描述： METAL GATE RF SILICON FET
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CERAMIC, DP, 3 PIN
文件頁數(shù)： 1/4頁
文件大小： 828K
代理商： D1014UK
2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375- 6602 www.point9.com www.rfmosfet.com
P
D
BV
DSS
V
GSS
I
D
T
stg
T
j
R
THj-case
Thermal resistance junction-case
Power Dissipation
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain Current
Storage temperature
Maximum operating junction temperature
87.5W
70V
±
20V
5A
-
65 to 150
°
C
200
°
C
Max. 2.0
°
C/W
GOLD METALLISED MULTI-PURPOSE
SILICON DMOS RF FET
Parameter
Test Conditions
Min. Typ. Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS(th)
gfs
Breakdown voltage, drain source V
GS
=0 I
D
=100mA
Drain leakage current
Gate leakage current
Gate threshold voltage
Transconductance (300
μ
s pulse)
70
Vdc
mAdc
μ
Adc
Vdc
Mhos
V
DS
=28V
V
GS
=20V
I
D
=10mA
V
DS
=10V
V
GS
=0
V
DS
=0
V
DS
=V
GS
I
D
=2A
2
1
7
1
1.6
G
PS
η
VSWR
Common source power gain
Drain efficiency
Load mismatch tolerance
P
O
=20W
13
60
20:1
dB
%
V
DS
=28V I
DQ
=0.2A
f=400MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=0V
V
DS
=28V
V
DS
=28V
V
GS
=-5V
V
GS
=0
V
GS
=0
f=1MHz
f=1MHz
f=1MHz
120
50
5
pF
pF
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and
metal flange is beryllium oxide. Beryllium oxide dust is
highly toxic and care must be taken during handling
and mounting to avoid damage to this area. THESE
DEVICES MUST NEVER BE THROWN AWAY WITH
GENERAL INDUSTRIAL OR DOMESTIC WASTE.
DM
A
B
C
D
E
F
G
H
I
J
K
M
Millimeter
16.51
6.35
1.52
3.30
18.90
1.27 X 45
°
2.16
14.22
1.52
6.35
0.10
5.08
TOL
.25
.13
.13
.13
.13
.13
.13
.05
.13
.13
.02
MAX
Inches
.650
.250
.060
.130
.744
.05 X 45
°
.085
.560
.060
.250
.004
.200
TOL
.010
.005
.005
.005
.005
.005
.005
.005
.005
.005
.001
MAX
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25
°
C unless otherwise stated)
U.S. PATENTS 5,121,176 & 5,179,032
GLOBAL PATENTS PENDING
D1014 TetraFET
20W - 28V - 500MHz
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C unless otherwise stated)
DIMENSIONS
P O I N T N I N E
T e c h n o l o g i e s , I n c .
FEATURES
METAL GATE
EXTRA LOW C
rss
BROAD BAND
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from DC to 500MHz
D
K
E
J
G
H
I
M
A
B
C
F
相關(guān)PDF資料
PDF描述
D1024UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL
D1025UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED
D1030UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W ? 28V ? 175MHz PUSH?PULL
D1034UK METAL GATE RF SILICON FET(GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W - 28V - 500MHz PUSH-PULL)
D106C Fixed Inductors for Surface Mounting
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