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參數(shù)資料
| 型號： | D1008UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-500MHz,推挽式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（80瓦- 28V的- 500MHz的，推挽式）（鍍金多用的DMOS射頻硅場效應(yīng)管（80瓦- 28V的- 500MHz的，推挽式）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | D1008UK |
D1008UK
9/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
175W
70V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
F
A
C
B
(
2 pls
)
K
2
3
E
1
G
(
4 pls
)
5
4
D
N
M
J
I
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 500MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
DK
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D1008UK | METAL GATE RF SILICON FET |
| D1009UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(150W-28V-500MHz,推挽式)) |
| D1009UK | METAL GATE RF SILICON FET |
| D1010UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(125W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(125W-28V-500MHz,推挽式)) |
| D1010UK | METAL GATE RF SILICON FET |
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