參數(shù)資料
型號: CZT3055
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
中文描述: 6 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 2/2頁
文件大小: 74K
代理商: CZT3055
MIN
0.059
0.018
0.000
MAX
10°
0.071
---
0.004
MIN
1.50
0.45
0.00
MAX
10°
1.80
---
0.10
A
B
C
D
E
F
G
H
I
J
K
L
M
0.009
0.248
0.114
0.130
0.264
0.024
0.014
0.264
0.122
0.146
0.287
0.033
0.23
6.30
2.90
3.30
6.70
0.60
0.35
6.70
3.10
3.70
7.30
0.85
SOT-223 (REV: R3)
15°
0.091
0.181
4.60
2.30
15°
DIMENSIONS
INCHES
SYMBOL
MILLIMETERS
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZT2955 PNP
CZT3055 NPN
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
R3 (17-June 2004)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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相關代理商/技術參數(shù)
參數(shù)描述
CZT3055 TR 制造商:CENTRAL SEMICONDUCTOR 功能描述:CZT3055 Series 60 V 6 A NPN SMT Complementary Silicon Power Transistor - SOT-223
CZT3055NPN 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
CZT3055-TR 功能描述:兩極晶體管 - BJT NPN Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
CZT3090L 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR
CZT3090L_10 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR