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參數資料
| 型號： | CYW2320ZI |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 217K |
| 代理商： | CYW2320ZI |
CYW2315
5
Note:
1.
ID
O
VS T; Charge pump current variation vs. temperature.
[IID
O(SI)@T
I
–
IID
O(SI)@25
°
C
I]/IID
O(SI)@25
°
C
I * 100% and
[IID
O(SO)@T
I
–
IID
O(SO)@25
°
C
I]/IID
O(SO)@25
°
C
I *100%.
Electrical Characteristics:
V
CC
= 3.0V, V
P
= 3.0V, T
A
=
–
40
°
C to +85
°
C, Unless otherwise specified
Parameter
Description
Test Condition
Pin
Min.
Typ.
Max.
Unit
I
CC
I
PD
F
IN
Power Supply Current
V
CC
V
CC
F
IN
4.5
mA
μA
Power-down Current
Power-down, V
CC
= 3.0V
6
100
Maximum Operating
Frequency
1.2
GHz
F
OSC
Oscillator Input Frequency
No load on OSC_OUT
OSC_IN
60
MHz
25
MHz
PF
IN
Input Sensitivity
V
CC
= 2.7V
V
CC
= 5.5V
F
IN
–
15
4
dBm
–
10
4
dBm
V
OSC
I
IH
, I
IL
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
ID
O(SO)
Oscillator Input Sensitivity
OSC_IN
0.5
V
P
–
P
μA
Oscillator Input Current
–
100
100
High Level Input Voltage
V
CC
= 5.0V
DATA,
CLOCK,
LE
V
CC
* 0.8
V
Low Level Input Voltage
V
CC
* 0.3
10
V
μA
High Level Input Current
–
10
1
Low Level Input Current
–
10
1
10
μA
High Level Output Voltage
F
O
/LD
2.2
V
Low Level Output Voltage
0.4
V
ID
O
, Source Current
V
P
= 3.0V, VD
O
= V
P
/2
V
P
= 5.0V, VD
O
= V
P
/2
D
O
–
3.2
mA
–
3.8
mA
ID
OH(SI)
ID
O
High, Sink Current
V
P
= 3.0V, VD
O
= V
P
/2
V
P
= 5.0V, VD
O
= V
P
/2
D
O
3.2
mA
3.8
mA
ID
O
ID
O
Charge Pump Sink and
Source Mismatch
VD
O
= V
P
/2
[IID
O(SI)
I
–
IID
O(SO)
I]/
[1/2*{IID
O(SI)
]I+IID
O(SO)
I}]*100%
–
40
°
C<T<85
°
C, V
DO
= V
P
/2
[1]
5
%
ID
O
vs T
Charge Pump Current
Variation vs. Temperature
5
%
ID
O-tri
Charge Pump High-
Impedance Leakage
Current
±2.5
nA
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