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參數(shù)資料
| 型號(hào)： | CY7C1399B |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 256K(32K x 8) Static RAM(256K(32K x 8)靜態(tài)RAM) |
| 中文描述： | 256K（32K的× 8）靜態(tài)隨機(jī)存儲(chǔ)器（256K（32K的× 8）靜態(tài)的RAM） |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | CY7C1399B |
256K(32K x 8) Static RAM
CY7C1399B
Cypress Semiconductor Corporation
Document #: 38-05071 Rev. *D
3901 North First Street
San Jose
,
CA 95134
Revised July 11, 2005
408-943-2600
Features
Single 3.3V power supply
Ideal for low-voltage cache memory applications
High speed
— 10/12/15 ns
Low active power
— 216 mW (max.)
Low-power alpha immune 6T cell
Plastic SOJ and TSOP packaging
Functional Description
[1]
The CY7C1399B is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE) and
active LOW Output Enable (OE) and three-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399B is available in 28-pin standard
300-mil-wide SOJ and TSOP Type I packages.
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Logic Block Diagram
Pin Configurations
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
SOJ
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O0
I/O
1
I/O
2
WE
A
4
A
3
A
2
A
1
OE
A
0
V
CC
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
5
CE
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
32K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
A
1
A
1
Selection Guide
1399B-10
10
60
500
50
1399B-12
12
55
500
50
1399B-15
15
50
500
50
1399B-20
20
45
500
50
Unit
ns
mA
μ
A
μ
A
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1399B-10VC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 10ns 28-Pin SOJ |
| CY7C1399B-10ZC | 制造商:Rochester Electronics LLC 功能描述:256K (32K X 8)- FAST ASYNCH SRAM - Bulk |
| CY7C1399B-10ZCT | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1399B-12VC | 功能描述:IC SRAM 256KBIT 12NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) |
| CY7C1399B-12VCT | 制造商:Rochester Electronics LLC 功能描述:256K (32K X 8)- FAST ASYNCH SRAM - Tape and Reel 制造商:Cypress Semiconductor 功能描述: |
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