- 您現在的位置：買賣IC網 > PDF目錄378499 > CY7C1357B-100BGC (CYPRESS SEMICONDUCTOR CORP) 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture PDF資料下載
參數資料
| 型號： | CY7C1357B-100BGC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
| 中文描述： | 512K X 18 ZBT SRAM, 7.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
| 文件頁數： | 1/33頁 |
| 文件大?。?/td> | 560K |
| 代理商： | CY7C1357B-100BGC |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
9-Mb (256K x 36/512K x 18) Flow-Through
SRAM with NoBL Architecture
CY7C1355B
CY7C1357B
Cypress Semiconductor Corporation
Document #: 38-05117 Rev. *B
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised January 27, 2004
Features
No Bus Latency (NoBL) architecture eliminates
dead cycles between write and read cycles.
Can support up to 133-MHz bus operations with zero
wait states
— Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT
devices
Internally self-timed output buffer control to eliminate
the need to use OE
Registered inputs for flow-through operation
Byte Write capability
3.3V/2.5V I/O power supply
Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
— 7.0 ns (for 117-MHz device)
— 7.5 ns (for 100-MHz device)
Clock Enable (CEN) pin to enable clock and suspend
operation
Synchronous self-timed writes
Asynchronous Output Enable
Offered in JEDEC-standard 100 TQFP, 119-Ball BGA and
165-Ball fBGA packages
Three chip enables for simple depth expansion.
Automatic Power-down feature available using ZZ
mode or CE deselect.
JTAG boundary scan for BGA and fBGA packages
Burst Capability—linear or interleaved burst order
Low standby power
Functional Description
[1]
The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18
Synchronous Flow-through Burst SRAM designed specifically
to support unlimited true back-to-back Read/Write operations
without
the
insertion
CY7C1355B/CY7C1357B is equipped with the advanced No
Bus Latency (NoBL) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of data through the SRAM, especially in systems that require
frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by the two or four Byte Write
Select (BW
X
) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
of
wait
states.
The
Selection Guide
133 MHz
6.5
250
30
117 MHz
7.0
220
30
100 MHz
7.5
180
30
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1357B-100BGI | 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
| CY7C1357B-117AC | 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
| CY7C1357B-117AI | 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
| CY7C1357B-117BGC | 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
| CY7C1357B-117BGI | 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C1357B-100BZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1357B-117AC | 制造商:Rochester Electronics LLC 功能描述:8M- 512KX18 3.3V FLOW-THROUGH-NOBL SRAM - Bulk |
| CY7C1357B-117AI | 制造商:Rochester Electronics LLC 功能描述:8M- 512KX18 3.3V FLOW-THROUGH-NOBL SRAM - Bulk |
| CY7C1357C-100AXC | 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1357C-100AXCT | 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。