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參數(shù)資料
| 型號(hào)： | CY7C1352 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 256K x18 Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的256Kx18流水線式 SRAM) |
| 中文描述： | 256K x18 SRAM的流水線架構(gòu)與總線延遲（帶總線延遲結(jié)構(gòu)的256Kx18流水線式的SRAM） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 184K |
| 代理商： | CY7C1352 |
256K x18 Pipelined SRAM with NoBL Architecture
CY7C1352
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
August 9, 1999
Features
Pin compatible and functionally equivalent to ZBT
devices MCM63Z818 and MT55L256L18P
Supports 143-MHz bus operations with zero wait states
—Data is transferred on every clock
Internally self-timed output buffer control to eliminate
the need to use OE
Fully registered (inputs and outputs) for pipelined
operation
Byte Write Capability
256K x 18 common I/O architecture
Single 3.3V power supply
Fast clock-to-output times
—4.0 ns (for 143-MHz device)
—4.2 ns (for 133-MHz device)
—5.0 ns (for 100-MHz device)
—7.0 ns (for 80-MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
Asynchronous output enable
JEDEC-standard 100-pin TQFP package
Burst Capability—linear or interleaved burst order
Low standby power
Functional Description
The CY7C1352 is a 3.3V 256K by 18 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1352 is equipped with the advanced No
Bus Latency (NoBL) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of the SRAM, especially in systems that require frequent
Read/Write transitions.The CY7C1352 is pin/functionally com-
patible to ZBT SRAMs MCM63Z819 and MT55L256L18P.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal, which
when deasserted suspends operation and extends the previ-
ous clock cycle. Maximum access delay from the clock rise is
4.0 ns (143-MHz device).
Write operations are controlled by the four Byte Write Select
(BWS
[1:0]
) and a Write Enable (WE) input. All writes are con-
ducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank se-
lection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
.
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation.
ZBT is a trademark of Integrated Device Technology.
CLK
A
[17:0]
CEN
CE1
CE2
WE
[1:0]
Mode
BWS
CE
OE
O
256Kx18
MEMORY
ARRAY
C
Logic Block Diagram
DQ
[15:0]
DP
[1:0]
DD
Q
18
CE
CONTROL
and WRITE
LOGIC
3
R
a
ADV/LD
18
18
18
18
18
Selection Guide
7C1352-143
7C1352-133
7C1352-100
7C1352-80
Maximum Access Time (ns)
4.0
4.2
5.0
7.0
Maximum Operating Current (mA)
Commercial
450
400
350
300
Maximum CMOS Standby Current (mA)
Commercial
5
5
5
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1353G-100AXC | 4-Mbit (256K x 18) Flow-through SRAM with NoBL⑩ Architecture |
| CY7C1353G | 4-Mbit (256K x 18) Flow-through SRAM with NoBL⑩ Architecture |
| CY7C1353G_07 | 4-Mbit (256K x 18) Flow-through SRAM with NoBL⑩ Architecture |
| CY7C1353G-100AXI | 4-Mbit (256K x 18) Flow-through SRAM with NoBL⑩ Architecture |
| CY7C1353G-133AXC | 4-Mbit (256K x 18) Flow-through SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C135-20JCT | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY7C135-25JC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Dual 5V 32K-Bit 4K x 8 25ns 52-Pin PLCC 制造商:Rochester Electronics LLC 功能描述:4KX8 52PIN CMOS DUAL PORT SRAM - Bulk |
| CY7C135-25JXC | 功能描述:IC SRAM 32KBIT 25NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C135-25JXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Kx8 32Kb 25ns DUAL PORT 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1352B100AC | 制造商:Cypress Semiconductor 功能描述: |
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