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參數(shù)資料
| 型號： | CY7C1231F |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2-Mbit (128K x 18) Flow-through SRAM with NoBL Architecture |
| 中文描述： | 2兆位（128K的× 18）流通過總線延遲結(jié)構(gòu)的SRAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 326K |
| 代理商： | CY7C1231F |
2-Mbit (128K x 18) Flow-through SRAM with
NoBL Architecture
CY7C1231F
Cypress Semiconductor Corporation
Document #: 38-05437 Rev. *A
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised April 5, 2004
Features
Can support up to 117-MHz bus operations with zero
wait states
— Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT
devices
Internally self-timed output buffer control to eliminate
the need to use OE
Registered inputs for flow-through operation
Byte Write capability
128K x 18 common I/O architecture
Single 3.3V power supply
Fast clock-to-output times
— 7.5 ns (for 117-MHz device)
— 8.5 ns (for 100-MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
Asynchronous Output Enable
JEDEC-standard 100 TQFP package
Burst Capability—linear or interleaved burst order
Low standby power
Functional Description
[1]
The CY7C1231F is a 3.3V, 128K x 18 Synchronous
Flow-through Burst SRAM designed specifically to support
unlimited true back-to-back Read/Write operations without the
insertion of wait states. The CY7C1231F is equipped with the
advanced No Bus Latency (NoBL) logic required to
enable consecutive Read/Write operations with data being
transferred on every clock cycle. This feature dramatically
improves the throughput of data through the SRAM, especially
in systems that require frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 7.5 ns (117-MHz
device).
Write operations are controlled by the two Byte Write Select
(BW
[A:B]
) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
Note:
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
C
MODE
BW
A
BW
B
WE
CE
1
CE
2
CE
3
ZZ
OE
READ LOGIC
DQs
DQP
A
DQP
B
MEMORY
ARRAY
E
INPUT
REGISTER
ADDRESS
REGISTER
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BURST
LOGIC
A0'
A1'
D1
D0
Q1
Q0
A0
A1
ADV/LD
CE
ADV/LD
C
CLK
CEN
WRITE
DRIVERS
D
A
T
A
S
T
E
E
R
I
N
G
S
E
N
S
E
A
M
P
S
WRITE ADDRESS
REGISTER
A0,
A1,
A
O
U
T
P
U
T
B
U
F
F
E
R
S
E
SLEEP
CONTROL
Logic Block Diagram
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PDF描述 |
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| CY7C1231H | 2-Mbit (128K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1231H-133AXC | 2-Mbit (128K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1231H-133AXI | 2-Mbit (128K x 18) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C128A-15PC | 2K x 8 Static RAM |
| CY7C128A-20DMB | 2K x 8 Static RAM |
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參數(shù)描述 |
|---|---|
| CY7C1231H-133AXC | 功能描述:靜態(tài)隨機存取存儲器 128KX18 NoBL FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C123-7VC | 制造商:Cypress Semiconductor 功能描述:Static RAM, 256x4, 24 Pin, Plastic, SOJ |
| CY7C1243KV18-400BZC | 功能描述:靜態(tài)隨機存取存儲器 36MB (2Mx18) 1.8v 400MHz QDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1243KV18-450BZC | 功能描述:靜態(tài)隨機存取存儲器 36MB (2Mx18) 1.8v 450MHz QDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C12451KV18-400BZC | 功能描述:靜態(tài)隨機存取存儲器 1Mb x 36 400 MHz Sync 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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