參數資料
型號： CY7C1041D-10ZSXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 256K X 16 STANDARD SRAM, 10 ns, PDSO44
封裝： LEAD FREE, TSOP2-44
文件頁數： 2/9頁
文件大?。?/td> 206K
代理商： CY7C1041D-10ZSXC
CY7C1041D
PRELIMINARY
Document #: 38-05472 Rev. *B
Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[2]
....–0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[2]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
.................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
Commercial
Industrial
5V
±
0.5
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage V
CC
= Min., I
OH
= –4.0 mA
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA
Input HIGH Voltage
Test Conditions
7C1041D-10
Min.
2.4
7C1041D-12
Min.
2.4
7C1041D-15
Min.
2.4
Max.
Max.
Max.
Unit
V
V
V
0.4
V
CC
+ 0.5
0.8
+1
+1
0.4
V
CC
+ 0.5
0.8
+1
+1
0.4
V
CC
+ 0.5
0.8
+1
+1
2.0
2.0
2.0
V
IL
I
IX
I
OZ
Input LOW Voltage
[2]
Input Load Current
Output Leakage
Current
V
CC
Operating
Supply Current
–0.5
–1
–1
–0.5
–1
–1
–0.5
–1
–1
V
μ
A
μ
A
GND < V
I
< V
CC
GND < V
OUT
< V
CC
,
Output Disabled
V
CC
= Max.,
f = f
MAX
= 1/t
RC
I
CC
Com’l
Ind’l
Com’l/
Ind’l
80
90
20
75
85
20
70
80
20
mA
I
SB1
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
mA
I
SB2
Com’l/
Ind’l
10
10
10
mA
Capacitance
[3]
Parameter
Description
Test Conditions
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
I/O Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Thermal Resistance
[3]
Parameter
Θ
JA
Description
Test Conditions
All - Packages
TBD
Unit
°
C/W
Thermal Resistance
(Junction to Ambient)
[3]
Thermal Resistance
(Junction to Case)
[3]
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
Θ
JC
TBD
°
C/W
Notes:
2. V
(min.) = –2.0V and V
(max) = V
+ 2V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
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相關代理商/技術參數
參數描述
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CY7C1041D-10ZSXIT 功能描述:靜態(tài)隨機存取存儲器 4M FAST ASYNC HI SPD IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1041D-2XWI 制造商:Cypress Semiconductor 功能描述:
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