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參數(shù)資料
| 型號： | CY62146CV18 |
| 英文描述： | Memory |
| 中文描述： | 內存 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 153K |
| 代理商： | CY62146CV18 |
CY62147V18 MoBL2
9
Typical DC and AC Characteristics
Truth Table
CE
H
WE
X
OE
X
BHE
X
BLE
X
Inputs/Outputs
High Z
Mode
Power
Deselect/Power-Down
Standby (I
SB
)
Standby (I
SB
)
Active (I
CC
)
Active (I
CC
)
L
X
X
H
H
High Z
Deselect/Power-Down
L
H
L
L
L
Data Out (I/O
O
–
I/O
15
)
Data Out (I/O
O
–
I/O
7
);
I/O
8
–
I/O
15
in High Z
Data Out (I/O
8
–
I/O
15
);
I/O
0
–
I/O
7
in High Z
High Z
Read
L
H
L
H
L
Read
L
H
L
L
H
Read
Active (I
CC
)
L
H
H
L
L
Deselect/Output Disabled
Active (I
CC
)
Active (I
CC
)
Active (I
CC
)
Active (I
CC
)
Active (I
CC
)
L
H
H
H
L
High Z
Deselect/Output Disabled
L
H
H
L
H
High Z
Deselect/Output Disabled
L
L
X
L
L
Data In (I/O
O
–
I/O
15
)
Data In (I/O
O
–
I/O
7
);
I/O
8
–
I/O
15
in High Z
Data In (I/O
8
–
I/O
15
);
I/O
0
–
I/O
7
in High Z
Write
L
L
X
H
L
Write
L
L
X
L
H
Write
Active (I
CC
)
1.2
1.4
1.0
0.6
0.4
0.2
1.65
1.8
SUPPLY VOLTAGE (V)
1.95
2.2
2.4
0.0
0.8
I
C
Normalized Operating Current
vs. Supply Voltage
MoBL2
30
35
25
15
10
5
1.65
1.8
1.95
2.2
0
20
S
μ
A
Standby Current vs. Supply Voltage
SUPPLY VOLTAGE (V)
MoBL2
80
90
70
50
40
30
1.65
1.8
1.95
2.2
SUPPLY VOLTAGE (V)
Access Time vs. Supply Voltage
20
60
A
MoBL2
相關PDF資料 |
PDF描述 |
|---|---|
| CY62146V | Memory |
| CY62146V18-85BAI | x16 SRAM |
| CY62146V18LL-70BAI | x16 SRAM |
| CY62147V18LL-70BAI | x16 SRAM |
| CY62147VLL-70BAI | SRAM|256KX16|CMOS|BGA|48PIN|PLASTIC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY62146CV18LL-55BAI | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY62146CV30 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:256K x 16 Static RAM |
| CY62146CV30LL-55BAI | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY62146CV30LL-55BVI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:256K x 16 Static RAM |
| CY62146CV30LL-70BAI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 4M-Bit 256K x 16 70ns 48-Pin FBGA 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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