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參數(shù)資料
| 型號： | CY20AAJ-8 |
| 英文描述： | CY20AAJ-8 Datasheet 87K/MAR.20.03 |
| 中文描述： | CY20AAJ - 8數(shù)據(jù)87K/MAR.20.03 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 85K |
| 代理商： | CY20AAJ-8 |
MITSUBISHI IGBT
CY20AAJ-8
Nch IGBT for STROBE FLASHER
Sep. 2001
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
V
(BR) CES
I
CES
I
GES
V
GE (th)
V
μ
A
μ
A
V
450
—
—
—
—
—
—
—
—
10
±
0.1
1.5
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
±
6V, V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Figure1. MAXIMUM PULSE COLLECTOR CURRENT
0
40
80
120
160
0
8
2
4
6
C
M
= 400
μ
F
P
C
GATE-EMITTER VOLTAGE V
GE
(V)
APPLICATION EXAMPLE
R
G
V
CE
V
CM
C
M
Vtrig
V
G
IGBT
IXe
+
–
Vtrig
TRIGGER
SIGNAL
V
G
IGBTE GATE
VOLTAGE
I
XE
Xe TUBE
CURRENT
Recommended operation conditions
V
CM
= 330V
I
CP
= 120A
C
M
= 300
μ
F
V
GE
= 5V
Notice 1. Gate drive voltage during on-state must be applied to satisfy the rating of maximum pulse collector current.
And peak reverse gate current during turn-off must become less than 0.1A. (In general, when R
G
(off) = 30
, it is satisfied.)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to give static electricity.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe
≤
130A : full luminescence condition) of main condenser (C
M
= 400
μ
F).
Repetitive period under the full luminescence conditions is over 3 seconds.
Notice 4. Total gate operation time must be applied within 5,000 hours.
Maximum operation conditions
V
CM
= 350V
I
CP
= 130A
C
M
= 400
μ
F
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相關代理商/技術參數(shù) |
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| CY20AAJ-8F | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Nch IGBT for Strobe Flasher |
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| CY20AAJ-8-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Nch IGBT for Strobe Flash |
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