參數(shù)資料
型號: CY143
英文描述: 2K x 16 Dual-Port Static RAM(193.25 k)
中文描述: 2K × 16雙口靜態(tài)存儲(chǔ)器(193.25十一)
文件頁數(shù): 6/14頁
文件大小: 193K
代理商: CY143
CY7C133
CY7C143
6
Switching Characteristics
Over the Operating Range
[6]
(continued)
Parameter
BUSY/INTERRUPT TIMING (For Master CY7C133)
Description
7C133-25
7C143-25
Min.
7C133-35
7C143-35
Min.
7C133-55
7C143-55
Min.
Unit
Max.
Max.
Max.
t
BLA
t
BHA
t
BLC
t
BHC
t
WDD
t
DDD
BUSY Low from Address Match
25
35
50
ns
BUSY High from Address Mismatch
20
30
40
ns
BUSY Low from CE LOW
20
25
35
ns
BUSY High from CE HIGH
Write Pulse to Data Delay
[12]
20
20
30
ns
50
60
80
ns
Write Data Valid to Read Data
Valid
[12]
BUSY High to Valid Data
[13]
Arbitration Priority Set Up Time
[14]
35
45
55
ns
t
BDD
t
PS
BUSY TIMING (For Slave CY7C143)
t
WB
t
WH
t
WDD
t
DDD
Write Data Valid to Read Data
Valid
[17]
Note 13
Note 13
Note 13
ns
5
5
5
ns
Write to BUSY
[15]
Write Hold After BUSY
[16]
Write Pulse to Data Delay
[17]
0
0
0
ns
20
25
30
ns
50
60
80
ns
35
45
55
ns
Switching Waveforms
Read Cycle No.1
[18, 19]
Notes:
12. Port-to-port delay through RAM cells from writing port to reading port. Refer to timing waveform of
Read with BUSY, Master: CY7C133.
13. t
is a calculated parameter and is greater of 0,t
WDD
t
WP
(actual) or t
DDD
t
DW
(actual).
14. To ensure that the earlier of the two ports wins.
15. To ensure that write cycle is inhibited during contention.
16. To ensure that a write cycle is completed after contention.
17. Port-to-port delay through RAM cells from writing port to reading port. Refer to timing waveform of
Read with Port-to-port Delay.
18. R/W is HIGH for read cycle.
19. Device is continuously selected, CE = V
IL
and OE = V
IL
.
t
RC
t
AA
t
OHA
DATA VALID
PREVIOUS DATA VALID
DATA OUT
ADDRESS
C133-5
Either Port Address Access
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