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參數資料
| 型號： | CXK77V1840GB |
| 廠商： | Sony Corporation |
| 英文描述： | 262,144-Word By 18-bit High Speed CMOS Synchronous Static RAM(262,144字 × 18位高速CMOS同步靜態(tài)RAM) |
| 中文描述： | 262,144 - Word的18位高速CMOS同步靜態(tài)隨機存儲器（262144字× 18位高速的CMOS同步靜態(tài)內存） |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 143K |
| 代理商： | CXK77V1840GB |
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PE96748-TE
Preliminary
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM
CXK77V1840GB
-8/10/12
Features
Fast cycle time:
CXK77V1840GB-8
CXK77V1840GB-10
CXK77V1840GB-12
Fast clock to data valid
CXK77V1840GB-8
CXK77V1840GB-10
CXK77V1840GB-12
High speed, low power consumption
Single +3.3 V power supply: 3.3 V +10 % –5 %
Inputs and outputs are LVTTL/LVCMOS
compatible
Byte Select capability
Asynchronous OE
Common data input and output
All inputs (except OE) and outputs are registered
on a single clock edge
Self-timed write cycle
Package
CXK77V1840GB
7
×
17 Plastic Ball Grid Array
with 50 mil pitch
(Cycle) (Frequency)
8 ns
125 MHz
10 ns
100 MHz
12 ns
83.3 MHz
4 ns
5.5 ns
7.5 ns
Structure
Silicon gate CMOS IC
Description
The CXK77V1840GB is a high speed CMOS
synchronous static RAM with common I/O pins,
organized as 262,144-words by 18-bits. This
synchronous SRAM integrates input registers, high
speed SRAM and output registers onto a single
monolithic IC. All input signals except OE are
latched at the positive edge of an external clock
(CLK). The RAM data from the previous cycle is
presented at the positive edge of the subsequent
clock cycle. Write operation is initiated by the
positive edge of CLK and is internally self-timed.
This feature eliminates complex off-chip write pulse
generation and provides increased flexibility for
incoming signals. Asynchronous OE adds the
flexibility of data bus control. 125 MHz operation is
obtained from a single 3.3 V power supply.
119 pin BGA (Plastic)
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