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參數(shù)資料
| 型號(hào)： | CXA3170AN |
| 廠商： | Sony Corporation |
| 英文描述： | 6ch. Read/Write Amplifier for Thin Film Head of Hard Disk Drive |
| 中文描述： | 6通道。讀/寫放大器薄膜磁頭的硬盤驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | CXA3170AN |
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E97640
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
6ch. Read/Write Amplifier for
Thin Film Head of Hard Disk Drive
For the availability of this product, please contact the sales office.
24 pin SSOP (Plastic)
CXA3170AN
Description
The CXA3170AN is a Read/Write Amplifier for the
thin film head of hard disk drive and designed to
handle up to 6 channel heads.
Features
Operate on single +5 V power supply
Low power consumption
Read : 85 mW
Write : 115 mW + I
W
×
5
Designed for two terminal thin-film or MIG heads
Read amplifier emitter follower output featuring
360 times gain (typ).
Differential input capacitance for Read : 6 pF (typ)
Input noise : 0.47 nV /
√
Hz (typ)
Write current range : 5 to 15 mA
Differential Head voltage swing : 9 Vp-p (typ)
I
W
Rise / Fall times : 3.7 ns (typ)
(L
H
=540 nH, R
H
=25
, I
W
=10 mA)
Differential P-ECL write data input
Built-in write unsafe detection circuit.
Built-in Servo write function (3/6 ch).
Built-in IC protection circuit for short of head and
GND.
Read data outputs are high impedance in write
mode.
Unselected head voltage is GND potential.
Built-in supply voltage monitor circuit prohibits
incorrect write during power on or abnormal
voltage.
Self switching damping resistance (R
D
= 360
).
Function
Read, Write and Write unsafe detection for HDD,
power supply ON/OFF detection.
Structure
Bipolar silicon monolithic IC
Absolute Maximum Ratings
(Ta=25 °C)
Supply voltage
Write current
Operating temperature
Storage temperature
Allowable power dissipation
V
CC
I
W
Topr
Tstg
6
V
20
mAo-p
–20 to +75
–55 to +150
°C
°C
P
D
800
mW
WUS/SE pin input current
I
SEH
15
mA
Recommended Operating Conditions
Supply voltage
Write current
V
CC
I
W
5.0 V±10
5 to 15 mAo-p
%
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