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參數(shù)資料
| 型號(hào)： | CT90AM-18 |
| 英文描述： | CT90AM-18 Datasheet 43K/MAR.20.03 |
| 中文描述： | CT90AM - 18數(shù)據(jù)43K/MAR.20.03 |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大小： | 42K |
| 代理商： | CT90AM-18 |
MITSUBISHI Nch IGBT
CT90AM-18
INSULATED GATE BIPOLAR TRANSISTOR
Sep. 2000
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
I
CES
I
GES
V
GE (th)
V
CE (sat)
C
ies
C
oes
C
res
t
d (on)
t
r
t
d (off)
t
f
E
tail
I
tail
V
EC
t
rr
R
th (ch-c)
R
th (ch-c)
mA
μ
A
V
V
pF
pF
pF
μ
s
μ
s
μ
s
μ
s
mJ/pls
A
V
μ
s
°
C/W
°
C/W
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
1.55
11000
180
125
0.05
0.10
0.20
0.30
0.6
6
—
0.5
—
—
1.0
±
0.5
6.0
1.95
—
—
—
—
—
—
—
1.0
12
3.0
2.0
0.5
4.0
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
V
CE
= 900V, V
GE
= 0V
V
GE
=
±
20V, V
CE
= 0V
V
CE
= 10V, I
C
= 6mA
I
C
= 60A, V
GE
= 15V
V
CE
= 25V, V
GE
V
CC
= 300V, I
C
= 60A, V
GE
= 15V, R
G
= 0
I
CP
= 60A, T
j
= 125
°
C, dv/dt = 200V/
μ
s
I
E
= 60A, V
GE
= 0V
I
E
= 60A, dis/dt = –20A/
μ
s
Junction to case
Junction to case
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