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參數(shù)資料
| 型號(hào)： | CT40KM-8H |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Nch IGBT for Strobe Flasher |
| 中文描述： | N溝道IGBT的頻閃閃光的 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 110K |
| 代理商： | CT40KM-8H |
CT40KM-8H
Rev.1.00, Aug.20.2004, page 3 of 4
Application Example
R
G
V
CE
V
CM
C
M
+
Vtrig
V
G
IGBT
IXe
–
V
CM
I
CP
C
M
V
GE
330 V
180 A
1200
μ
F
28 V
Recommended Operation
Conditions
350 V
200 A
1500
μ
F
—
Maximum Operation
Conditions
Vtrig
Trigger Signal
V
G
IGBT
Gate Voltage
IXe
Xe Tube Current
Precautions on Usage
1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 1 A. (In general, when R
G(off)
= 30
, it is satisfied.)
2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
3. The operation life should be endured 5,000 shots under the charge current (I
Xe
≤
200 A : full luminescence
condition) of main capacitor (C
M
= 1500 μF) which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CT40KM-8H_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Nch IGBT for Strobe Flasher |
| CT40RF | 制造商:CellTech Power LLC 功能描述:Bulk |
| CT40TMH8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 200A I(C) | SOT-186 |
| CT40TMH-8 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:STROBE FLASHER USE |
| CT41 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD |
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