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參數(shù)資料
| 型號： | CT20ASJ-8 |
| 廠商： | POWEREX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | STROBE FLASHER USE |
| 中文描述： | 400 V, N-CHANNEL IGBT |
| 封裝： | MP-3, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | CT20ASJ-8 |
Feb.1999
CT20ASJ-8
450
—
—
—
—
—
—
—
—
10
±
0.1
1.5
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
±
6V, V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
V
(BR)CES
I
CES
I
GES
V
GE(th)
400
±
6
±
8
130
–40 ~ +150
–40 ~ +150
V
V
V
A
°
C
°
C
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
V
CES ...............................................................................
400V
I
CM ....................................................................................
130A
Drive Voltage
V
GE
=4V
Small Package
MP-3
V
μ
A
μ
A
V
OUTLINE DRAWING
Dimensions in mm
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20ASJ-8
STROBE FLASHER USE
APPLICATION
Strobe Flasher.
V
GE
= 0V
See figure 1
Parameter
Conditions
Symbol
Ratings
Unit
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
MAXIMUM RATINGS
(Tc = 25
°
C)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
MP-3
6.5
2
2.3
0.9MAX.
1
2.3
1.0
0.5 ± 0.1
5
1
2
1
1
2
3
4
0.5 ± 0.2
0.8
5.0 ± 0.2
q
GATE
w
COLLECTOR
e
EMITTER
r
COLLECTOR
w r
q
e
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相關代理商/技術參數(shù) |
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|---|---|
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