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參數(shù)資料
| 型號(hào)： | CSD1833D |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 7A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | CSD1833D |
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com
TO-220 / FP
200 pcs/polybag
50 pcs/tube
396 gm/200 pcs
120 gm/50 pcs
3" x 7.5" x 7.5"
3.5" x 3.7" x 21.5"
1.0K
1.0K
17" x 15" x 13.5"
19" x 19" x 19"
16.0K
10.0K
36 kgs
29 kgs
PACKAGE
Net Weight/Qty
Details
STANDARD PACK
INNER CARTON BOX
Qty
OUTER CARTON BOX
Qty
Gr Wt
Size
Size
Packing Detail
Continental Device India Limited
Data Sheet
Page 3 of 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CSD1833E | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| CSD1833F | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| CSD200 | TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 2.5A I(C) | TO-3 |
| BDY38 | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:35Vrms; Voltage Rating DC, Vdc:45VDC; Peak Surge Current (8/20uS), Itm:2000A; Clamping Voltage 8/20us Max :110V; Peak Energy (10/1000uS):30J; Capacitance, Cd:10000pF |
| BU608 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7A I(C) | TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSD1833E | 制造商:CDIL 制造商全稱(chēng):Continental Device India Limited 功能描述:NPN SILICON EPITAXIAL POWER TRANSISTOR |
| CSD1833F | 制造商:CDIL 制造商全稱(chēng):Continental Device India Limited 功能描述:NPN SILICON EPITAXIAL POWER TRANSISTOR |
| CSD18501Q5A | 功能描述:MOSFET 40V N-Channel NexFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| CSD18502KCS | 功能描述:MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| CSD18502Q5B | 功能描述:MOSFET 40-V N-Ch NexFET Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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