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參數(shù)資料
| 型號(hào)： | CSC2655 |
| 廠商： | Continental Device India Limited |
| 英文描述： | COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS |
| 中文描述： | 互補(bǔ)硅外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 95K |
| 代理商： | CSC2655 |
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
CSA1020 PNP
CSC2655 NPN
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
V
CEO
V
CBO
V
EBO
I
C
P
C
T
j
, T
stg
50
50
5
2
900
V
V
V
A
mW
oC
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
min
typ
max
UNIT
Collector Emitter Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
BV
CEO
I
CBO
I
EBO
h
FE
I
C
=10mA,I
B
=0
V
CB
=50V, I
E
= 0
V
EB
=5V, I
C
= 0
V
CE
=2V,I
C
=500mA *
V
CE
=2V,I
C
=1.5A
I
C
=1A, I
B
=50mA
50
-
-
70
40
-
-
V
μ
A
μ
A
1.0
1.0
240
-
0.5
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
V
CE(sat)
V
V
BE(sat)
I
C
=1A, I
B
=50mA
-
1.2
V
DYNAMIC CHARACTERISTICS
Gain Bandwidth Product
Output Capacitance
f
T
I
C
=500mA, V
CE
=2V
I
E
=0, V
CB
=10V,f=1MHz
-
100
-
MHz
C
ob
PNP
NPN
-
-
40
30
-
-
P
F
P
F
Switching Time
Turn on Time
Storage Time
Fall Time
Classification
h
FE
*
t
on
t
stg
t
f
V
CC
=30V, I
B1
=I
B2
=
50mA, R
L
=30
Duty Cycle=1%
-
-
-
Y
0.1
1.0
0.1
-
-
-
us
us
us
O
70 - 140
120 - 240
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CSA1020 | COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS |
| CSC2712G | SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC3255 | NPN SILICON EPITAXIAL POWER TRANSISTOR |
| CSC3930 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC3936 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSC2655O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| CSC2655Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| CSC2688 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON EPITAXIAL POWER TRANSISTOR |
| CSC2688G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 |
| CSC2688O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 |
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