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參數(shù)資料
| 型號： | CSC2328AY |
| 英文描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 1.5AI（丙）|至92 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 25K |
| 代理商： | CSC2328AY |
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current (Pulse value) (1)
Base current (DC)
Total power dissipation up to T
C
= 25°C
Total power dissipation up to T
A
= 25°C
Junction temperature
Storage temperature
I
C
I
B
P
tot
P
tot
T
j
T
stg
max.
max.
max.
max.
max.
–65 to +150
oC
15 A
3.5 A
40 W
1.5 W
150
oC
THERMAL CHARACTERISTICS
From junction to case
R
th j–c
3.125 °C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
E
= 0; V
CB
= 400V
R
BE
= 51
; V
CE
= 400V; T
A
= 125°C
V
BE(off)
= 1.5V; V
CE
= 400V
V
BE(off)
= 1.5V; V
CE
= 400V; T
A
= 125°C
Emitter cut-off current
I
C
= 0; V
EB
= 5V
Breakdown voltages
I
C
= 3 A; I
B1
= 0.6A; L = 1mH
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 3 A; I
B
= 0.6 A
I
CBO
I
CER
I
CEX
I
CEX
max.
max.
max.
max.
10 μA
1.0 mA
10 μA
1.0 mA
I
EBO
max.
10 μA
V
CEO(sus)
*
V
CBO
V
EBO
min.
min.
min.
400 V
500 V
7.0 V
V
CEsat
*
V
BEsat
*
max.
max.
1.0 V
1.2 V
D.C. current gain
I
C
= 0.1A; V
CE
= 5V
h
FE
*
min.
max.
20
80
I
C
= 1A; V
CE
= 5V**
h
FE
*
min.
max.
20
80
I
C
= 3A; V
CE
= 5V
h
FE
*
min.
10
Switching time
I
C
= 3A; R
L
= 50
I
B1
= –I
B2
= 0.6A; V
CC
= 150V
Turn on time
Storage time
Fall time
t
on
t
s
t
f
max.
max.
max.
1.0 μs
2.5 μs
1.0 μs
* Pulse test: P
W
≤
350 μs; duty cycle
≤
2% pulsed.
(1) P
W
≤
300 μs; duty cycle
≤
10%.
**h
FE
classification: R: 20-40 O: 30-60 Y: 40-80
CSC2335
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