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參數(shù)資料
| 型號： | CSB810 |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|進(jìn)步黨| 110伏特五（巴西）總裁| 8A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 89K |
| 代理商： | CSB810 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
CSB810
(9AW)
TO-220
MARKING : CSB
810
Designed for Relay Drive and Motor Drive
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
t=50ms
Base Current
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
VALUE
110
110
5.0
8.0
12
1.0
2.0
60
150
-55 to +150
UNIT
V
V
V
A
A
A
W
W
deg C
deg C
Tj
Tstg
SYMBOL
VCEO
ICBO
IEBO
VCE(Sat)
hFE
TEST CONDITION
IC=5mA, IB=0
VCB=110V, IE=0
VEB=5V,IC=0
IC=5A,IB=5mA
IC=2A, VCE=3V
IC=8A, VCE=3V
MIN
110
-
-
-
1.0
1.0
TYP
-
-
-
-
-
-
MAX
-
100
3.0
2.5
20
-
UNIT
V
uA
mA
V
K
K
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
ft
VCE=12V,IC=0.5A,
VCB=10V, IE=0
f=1MHz
-
-
100
110
-
-
MHz
pF
Cob
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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