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參數(shù)資料
| 型號： | CSB1370F |
| 廠商： | Continental Device India Limited |
| 英文描述： | PNP SILICON EPITAXIAL POWER TRANSISTOR |
| 中文描述： | 進步黨硅外延功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 89K |
| 代理商： | CSB1370F |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON EPITAXIAL POWER TRANSISTOR
CSB1370
(9AW)
TO-220
MARKING : AS BELOW
Designed For AF Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter- Base Voltage
Collector Current
Peak
Power Dissipation @ Ta=25 deg C
Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transition Frequency
VCBO
VCEO
VEBO
IC
ICP
PC
60
60
5.0
3.0
6.0
2.0
30
150
V
V
V
A
A
W
W
Tj
Tstg
deg C
deg C
-55 to +150
SYMBOL
VCEO
VCBO
VEBO
ICBO
IEBO
VCE(Sat)
VBE(Sat)
hFE
TEST CONDITION
IC=1mA, IB=0
IC=50uA, IE=0
IE=50uA,IC=0
VCB=60V, IE=0
VEB=4V,IC=0
IC=2A,IB=0.2A
IC=2A, IB=0.2A
IC=0.5A, VCE=5V
MIN
60
60
5.0
-
-
-
-
60
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
10
10
1.5
1.5
320
UNIT
V
V
V
uA
uA
V
V
ft
VCE=5V,IC=0.5A,
f=5MHz
VCB=10V, IE=0
f=1MHz
-
15
-
MHz
Collector Output Capacitance
Cob
-
80
-
pF
hFE CLASSIFICATION:-
MARKING :
D : 60 -120;
CSB
1370
D
E : 100 -200
CSB
1370
E
F : 160 -320
CSB
1370
F
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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