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參數(shù)資料
| 型號： | CS517GD16 |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 176K |
| 代理商： | CS517GD16 |
C
3
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Electrical Characteristics:
0°C < T
A
< +70°C; 0°C < T
J
< +85°C; 8V < V
CC1
< 14V ; 5V < V
CC2
< 14V ; DAC Code: V
ID4
= V
ID2
=
V
ID1
= V
ID0
= 1; V
ID3
= 0; CV
GATE(L)
and CV
GATE(H)
= 1nF; C
OFF
= 330pF; C
SS
= 0.1μF, unless otherwise specified.
I
DAC: continued
V
ID4
V
ID3
V
ID2
V
ID1
V
ID0
0
0
1
0
0
0
0
0
0
0
0
0
0
0 0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
0
1
1
0
1
1
0
1
0
1
1
0
1
1
0
1
1
0
1
1
0
0
1
0
0
1
0
0
1
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1.8315
1.8810
1.9305
1.9800
2.0295
1.2315
2.0790
2.1780
2.2770
2.3760
2.4750
2.5740
2.6730
2.7720
2.8710
2.9700
3.0690
3.1680
3.2670
3.3660
3.4650
1.8500
1.9000
1.9500
2.0000
2.0500
1.2440
2.1000
2.2000
2.3000
2.4000
2.5000
2.6000
2.7000
2.8000
2.9000
3.0000
3.1000
3.2000
3.3000
3.4000
3.5000
1.8685
1.9190
1.9695
2.0200
2.0705
1.2564
2.1210
2.2220
2.3230
2.4240
2.5250
2.6260
2.7270
2.8280
2.9290
3.0300
3.1310
3.2320
3.3330
3.4340
3.5350
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
GATE(H)
and V
GATE(L)
Out SOURCE Sat at 100mA
Out SINK Sat at 100mA
Measure V
CC1
– V
GATE(L),
;V
CC2
– V
GATE(H)
Measure V
GATE(H)
– V
PGnd
;
V
GATE(L)
– V
PGnd
1V < V
GATE(H)
< 9V; 1V < V
GATE(L)
< 9V
V
CC1
= V
CC2
= 12V
9V > V
GATE(H)
> 1V; 9V > V
GATE(L)
> 1V
V
CC1
= V
CC2
= 12V
V
GATE(H)
falling to 2V; V
CC1
= V
CC2
= 8V
V
GATE(L)
rising to 2V
V
GATE(L)
falling to 2V; V
CC1
= V
CC2
= 8V
V
GATE(H)
rising to 2V
Resistor to LGnd
LGnd to V
GATE(H)
@ 10mA
LGnd to V
GATE(L)
@ 10mA
1.2
1.0
2.0
1.5
V
V
Out Rise Time
30
50
ns
Out Fall Time
30
50
ns
Delay V
GATE(H)
to V
GATE(L)
25
50
ns
Delay V
GATE(L)
to V
GATE(H)
25
50
ns
V
GATE(H)
, V
GATE(L)
Resistance
V
GATE(H)
, V
GATE(L)
Schottky
20
50
600
100
800
k
mV
I
Soft Start (SS)
Charge Time
Pulse Period
Duty Cycle
COMP Clamp Voltage
V
FFB
SS Fault Disable
High Threshold
1.6
25
1.0
0.50
0.9
3.3
100
3.3
0.95
1.0
2.5
5.0
200
6.0
1.10
1.1
3.0
ms
ms
%
V
V
V
(Charge Time/ Pulse Period)
×
100
V
FB
= 0V; V
SS
= 0
V
GATE(H)
= Low; V
GATE(L)
= Low
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