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參數(shù)資料
| 型號(hào)： | CS5151HGDR16 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 1.5 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 555K |
| 代理商： | CS5151HGDR16 |
CS5151H
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (continued) (0°C < TA < +70°C; 0°C < TJ < +125°C; 8.0 V < VCC1 < 14 V;
5.0 V < VCC2 < 20 V; DAC Code: VID2 = VID1 = VID0 =1; VID3 = 0; CVGATE(L) and CVGATE(H) = 1.0 nF; COFF = 330 pF; CSS = 0.1 μF, unless
otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGATE
Out SOURCE Sat at 100 mA
Measure VCC2 VGATE
1.2
2.0
V
Out SINK Sat at 100 mA
Measure VGATE VPGND
1.0
1.5
V
Out Rise Time
1.0 V < VGATE < 9.0 V; VCC1 = VCC2 = 12 V
30
50
ns
Out Fall Time
9.0 V > VGATE > 1.0 V; VCC1 = VCC2 = 12 V
30
50
ns
ShootThrough Current
Note 3
50
mA
VGATE Resistance
Resistor to LGND. Note 3
20
50
100
kΩ
VGATE Schottky
LGND to VGATE @ 10 mA
600
800
mV
Soft Start (SS)
Charge Time
1.6
3.3
5.0
ms
Pulse Period
25
100
200
ms
Duty Cycle
(Charge Time /Pulse Period) × 100
1.0
3.3
6.0
%
COMP Clamp Voltage
VFB = 0 V; VSS = 0
0.50
0.95
1.10
V
VFFB SS Fault Disable
VGATE = Low
0.9
1.0
1.1
V
High Threshold
2.5
3.0
V
PWM Comparator
Transient Response
VFFB = 0 to 5.0 V to VGATE = 9.0 V to 1.0 V;
VCC1 = VCC2 = 12 V
100
125
ns
VFFB Bias Current
VFFB = 0 V
0.3
μA
Supply Current
ICC1
No Switching
8.5
13.5
mA
ICC2
No Switching
1.6
3.0
mA
Operating ICC1
VFB = COMP = VFFB
8.0
13
mA
Operating ICC2
VFB = COMP = VFFB
2.0
5.0
mA
COFF
Normal Charge Time
VFFB = 1.5 V; VSS = 5.0 V
1.0
1.6
2.2
μs
Extension Charge Time
VSS = VFFB = 0
5.0
8.0
11.0
μs
Discharge Current
COFF to 5.0 V; VFB > 1.0 V
5.0
mA
Time Out Timer
Time Out Time
VFB = VCOMP; VFFB = 2.0 V;
Record VGATE Pulse High Duration
10
30
65
μs
Fault Mode Duty Cycle
VFFB = 0V
35
50
70
%
3. Guaranteed by design, not 100% tested in production.
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