參數(shù)資料
型號(hào)： CS35L00-CNZ
廠商： CIRRUS LOGIC INC
元件分類： 音頻／視頻放大
中文描述： 2.7 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO10
封裝： 3 X 3 MM, LEAD FREE, MO-220, DFN-10
文件頁(yè)數(shù)： 34/34頁(yè)
文件大小： 730K
代理商： CS35L00-CNZ
CS35L00
DS906PP1
9
ELECTRICAL CHARACTERISTICS - ALL OPERATIONAL MODES
Note:
6. No external loads should be connected to the LFILT+ net. Any connection of a load to this point may
result in errant operation or performance degradation in the device.
7. When VBATT is below this threshold (VBLIM), operation is automatically restricted to SD mode.
8. When operating in HD or FHD mode and the differential input voltage remains below the input level
threshold (VIN-LDO) for a period of time (tLDO), the PWM outputs will be powered by the internally
generated LDO supply (VLDO).
9. When operating in HD or FHD mode and the differential input voltage is above this input level
threshold (VIN-VBATT), the PWM outputs will be powered directly from the VBATT supply.
10. Refer to Section 5.5 for more information on Thermal Error functionality.
11. Under Voltage Lockout is the threshold at which a decreasing VBATT supply will disable device
operation.
Parameters
Symbol
Test Conditions
Min
Typ
Max Units
Max. Current from LFILT+
ILFILT+
-10
-
μA
LFILT+ Output Impedance
ZLFILT+
-0.7
-
Ω
VBATT Limit for HD/FHD Mode
VBLIM
-3.0
-
VDC
Input Level for Entering LDO Operation in
HD/FHD Modes
VIN-LDO
GAIN_SEL = Low (12 dB)
GAIN_SEL = High (6 dB)
-
0.015VBATT
0.029VBATT
-
Vrms
Input Level for Entering VBATT Operation in
HD/FHD Modes
VIN-VBATT
GAIN_SEL = Low (12 dB)
GAIN_SEL = High (6 dB)
-
0.10
0.20
-
Vrms
LDO Entry Time Delay
tLDO
-
1200
-
ms
LDO Level for HD/FHD Modes
VLDO
-
1.0
-
V
Output Offset Voltage
VOFFSET Inputs AC coupled to GND
-+/-2
-
mV
Amplifier Gain
AV
GAIN_SEL = Low
GAIN_SEL = High
-
12
6
-
dB
Shutdown Supply Current
IA(SD)
SD = Low
-0.05
-
μA
MOSFET On Resistance
RDS(ON) Ibias = 0.5 A
-350
-
m
Ω
Thermal Error Threshold
TTE
-150
-
°C
Thermal Error Retry Time
RTE
-
1200
-
ms
Under Voltage Lockout Threshold (Note 10)
UVLO
-
2.0
-
V
Operating Efficiency
η
Output Levels at 10% THD+N
8
Ω
+
33
μ
H
Lo
ad
VBATT = 5 VDC
-
90
-
%
VBATT = 3.7 VDC
-
89
-
%
4
Ω
+
33
μ
H
Lo
ad
VBATT = 5 VDC
-
84
-
%
VBATT = 3.7 VDC
-
83
-
%
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