參數(shù)資料
型號: CS220-25N
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 晶閘管
英文描述: SILICON CONTROLLED RECTIFIER 25 AMP, 200 THRU 800 VOLTS
中文描述: 25 A, 800 V, SCR, TO-220AB
封裝: PLASTIC, TO-220, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 66K
代理商: CS220-25N
CS220-25B
CS220-25D
CS220-25M
CS220-25N
SILICON CONTROLLED RECTIFIER
25 AMP, 200 THRU 800 VOLTS
TO-220 CASE
Central
Semiconductor Corp.
TM
R1 (14-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS220-25B
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
CS220
-25B
CS220
-25D
CS220
-25M
CS220
-25N
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
IT(RMS)
ITSM
I
2
t
200
400
600
800
V
RMS On-State Current (TC=90°C)
Peak One Cycle Surge (t=10ms)
I
2
t Value for Fusing (t=10ms)
25
A
250
A
310
A
2
s
Peak Gate Power (tp=10μs)
PGM
PG (AV)
IFGM
VFGM
VRGM
di/dt
40
W
Average Gate Power Dissipation
1.0
W
Peak Forward Gate Current (tp=10μs)
4.0
A
Peak Forward Gate Voltage (tp=10μs)
16
V
Peak Reverse Gate Voltage (tp=10μs)
5.0
V
Critical Rate of Rise of On-State Current
100
A/μs
Storage Temperature
Tstg
TJ
Θ
JA
Θ
JC
-40 to +150
°C
Junction Temperature
-40 to +125
°C
Thermal Resistance
60
°C/W
Thermal Resistance
1.3
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
Rated VDRM, VRRM
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10
IT=100mA
VD=12V, RL=10
ITM=50A, tp=380μs
VD=
2
/
3
VDRM, TC=125°C
10
μA
4.0
mA
4.2
30
mA
12.5
50
mA
0.65
1.50
V
1.80
V
200
V/μs
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