參數(shù)資料
型號(hào): CS18N
廠(chǎng)商: CENTRAL SEMICONDUCTOR CORP
元件分類(lèi): 晶閘管
英文描述: SILICON CONTROLLED RECTIFIER
中文描述: 1 A, 800 V, SCR, TO-18
封裝: HERMETIC SEALED PACKAGE-3
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 76K
代理商: CS18N
CS18B
CS18D
CS18M
CS18N
SILICON CONTROLLED RECTIFIER
1.0 AMP, 200 THRU 800 VOLTS
TO-18 CASE
Central
Semiconductor Corp.
TM
R1 (18-August 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS18B series
types are hermetically sealed silicon controlled
rectifiers manufactured in a TO-18 case, designed
for
control
systems
applications.
and
sensing
circuit
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
CS18B CS18D CS18M CS18N
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
IT(RMS)
ITSM
I
2
t
200
400
600
800
V
RMS On-State Current (TC=90°C)
Nonrept. On-State Current
1.0
A
10
A
Fusing Current (t=10ms)
0.24
A
2
s
Peak Gate Current (t=10μs)
IGM
PGM
PG (AV)
Tstg
TJ
Θ
JC
Θ
JA
1.0
A
Peak Gate Dissipation (t=10μs)
2.0
W
Gate Dissipation
0.1
W
Storage Temperature
-40 to +150
°C
Junction Temperature
-40 to +125
°C
Thermal Resistance
32
°C/W
Thermal Resistance
200
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
Rated VDRM, VRRM, RGK=1.0K
Rated VDRM, VRRM, RGK=1.0K
,
TC=125°C
MIN
TYP
MAX
UNITS
IDRM, IRRM
1.0
μA
IDRM, IRRM
0.1
mA
VTM
IT=2.0A
VD=12V, RL=10
VD=12V, RL=10
RGK=1.0K
VD=0.67V x VDRM,RGK=1.0K
,
TC=125°C
1.6
2.15
V
IGT
20
200
μA
VGT
0.65
0.8
V
IH
0.5
5.0
mA
dv/dt
25
V/μs
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