參數資料
型號： CRF24060D
廠商： Cree, Inc.
英文描述： 60 W SiC RF Power MESFET Die
中文描述： 60瓦SiC射頻功率MESFET模具
文件頁數： 2/8頁
文件大小： 720K
代理商： CRF24060D
2
CRF24060D Preliminary Rev .
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com/wireless
Copyright 2004-2006 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document
(including this copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree
logo are registered trademarks and Wireless by Cree is a trademark of Cree, Inc. Other trademarks, product and company names are
the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
Absolute Maximum Ratings (not simultaneous) at 25C
Parameter
Symbol
Rating
Units
Drain-source Voltage
V
DSS
V
GS
T
STG
T
J
R
θ
JC
T
S
120
VDC
Gate-source Voltage
-20, +3
VDC
Storage Temperature
-55, 150
C
Operating Junction Temperature
255
C
Thermal Resistance, Junction to Case
1
1.4
C/W
Mounting Temperature (30 seconds)
320
C
1
Eutectic die attach using 80/20 AuSn mounted to a 60 mil thick CuMoCu carrier.
Electrical Characteristics (TC = 25C)
(Measured using eutectic die attach with 80/20 AuSn solder mounted to a 60 mil thick CuMoCu carrier)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
V
GS(th)
-13
-10
–
VDC
V
DS
= 10 V, I
D
= 2.5 mA
Gate Quiescent Voltage
V
GS(Q)
–
-7
–
VDC
V
DS
= 48 V, I
D
= 2000 mA
Zero Gate Voltage Drain Current
I
DSS
6.0
7.5
9.0
A
V
DS
= 10 V, V
GS
= 0 V
Drain-Source Breakdown Voltage
V
(BR)DSS
100
–
–
VDC
V
GS
= -18, I
D
= 50 mA
Forward Transconductance
g
m
700
800
–
mS
V
DS
= 48 V, I
D
= 2000 mA
RF Characteristics
Gain
G
SS
10
13
–
dB
V
= 48 V, I
DQ
= 2000 mA,
f = 1500 MHz
Power Output at 1 dB Compression
P
1dB
50
60
–
W
V
= 48 V, I
DQ
= 2000 mA,
f = 1500 MHz
Drain Efficiency
1,2
η
40
45
–
%
V
= 48 V, I
= 2000 mA,
f = 1500 MHz P
OUT
= P
1dB
V
= 48 V, I
= 2000 mA
f1 = 1000.0 MHz, f2 = 1000.1 MHz
P
OUT
= 50 W PEP
No damage at all phase angles
V
= 48 V, I
= 2000 mA,
f = 1000 MHz P
OUT
= 50 W CW
Intermodulation Distortion
IMD
3
–
-31
–
dBc
Output Mismatch Stress
VSWR
10:1
–
–
–
Dynamic Characteristics
Input Capacitance
C
DS
–
9.5
–
pF
V
DS
= 48 V, V
gs
= -16 V, f = 1 MHz
Output Capacitance
C
GS
–
6.5
–
pF
V
DS
= 48 V, V
gs
= -16 V, f = 1 MHz
Reverse Transfer Capacitance
C
GD
–
2.2
–
pF
V
DS
= 48 V, V
gs
= -16 V, f = 1 MHz
Notes:
1
Drain Efficiency = P
/P
2
Power Added Efficiency (PAE) = (P
OUT
-P
IN
) / P
DC
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