參數(shù)資料
型號: CRF24060
廠商: Cree, Inc.
英文描述: 60 W, SiC RF Power MESFET
中文描述: 60瓦,SiC射頻功率MESFET
文件頁數(shù): 2/10頁
文件大?。?/td> 559K
代理商: CRF24060
2
CRF24060 Rev .2
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2002-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks and Wireless by Cree is a trademark of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter
Symbol
Rating
Units
Drain-source Voltage
V
DSS
V
GS
T
STG
T
J
R
θ
JC
T
S
120
Volts
Gate to source Voltage
-20, +3
Volts
Storage Temperature
-55, +150
C
Operating Junction Temperature
255
C
Thermal Resistance, Junction to Case
1.4
C/W
Soldering Temperature
225
C
Electrical Characteristics (T
C
= 25C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
V
GS(th)
-13
-10
VDC
V
DS
= 10 V, I
D
= 2.5 mA
Gate Quiescent Voltage
V
GS(Q)
-7
VDC
V
DS
= 48 V, I
D
= 2000 mA
Zero Gate Voltage Drain Current
I
DSS
6.0
7.5
9.0
A
V
DS
= 10 V, V
GS
= 0 V
Drain-Source Breakdown Voltage
V
(BR)DSS
100
VDC
V
GS
= -18, I
D
= 50 mA
Forward Transconductance
g
m
700
800
mS
V
DS
= 48 V, I
D
= 2000 mA
Case Operating Temperature
T
C
-30
125
C
Screw Torque
T
80
in-oz
Reference 440193 Rev 1
RF Characteristics
Gain
G
SS
10
13
dB
V
= 48 V, I
DQ
= 2000 mA,
f = 1500 MHz
Power Output at 1 dB Compression
P
1dB
50
60
W
V
= 48 V, I
DQ
= 2000 mA,
f = 1500 MHz
Power Output at 3 dB Compression
P
3dB
-
80
W
V
= 48 V, I
DQ
= 2000 mA,
f = 1500 MHz
Drain Efficiency
1,2
η
40
45
%
V
= 48 V, I
= 2000 mA,
f = 1500 MHz P
OUT
= P
1dB
V
= 48 V, I
= 2000 mA,
f
1
= 1000 MHz, f
2
= 1000.1 MHz,
P
OUT
= 50W PEP
No damage at all phase angles,
V
= 48 V, I
= 2000 mA,
f = 1000 MHz, P
OUT
= 50W CW
Intermodulation Distortion
IMD
3
-31
dBc
Output Mismatch Stress
VSWR
10 : 1
Y
Notes:
1
Drain Efficiency = P
/ P
2
Power Added Efficiency (PAE) = (P
OUT
- P
IN
) / P
DC
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