參數(shù)資料
型號: CRF24010
廠商: Cree, Inc.
英文描述: 10 W, SiC RF Power MESFET
中文描述: 10瓦,SiC射頻功率MESFET
文件頁數(shù): 2/10頁
文件大小: 652K
代理商: CRF24010
2
CRF2400 Rev .8
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com/wireless
Copyright 2002-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter
Symbol
Rating
Units
Drain-source Voltage
V
DSS
V
GS
T
STG
T
J
R
θ
JC
120
Volts
Gate to source Voltage
-20, +3
Volts
Storage Temperature
-55, +150
C
Operating Junction Temperature
255
C
Thermal Resistance, Junction to Case
5.6
C/W
Soldering Temperature
T
S
225
C
Electrical Characteristics (T
C
= 25C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
V
GS(th)
-12
-10
VDC
V
DS
= 10 V, I
D
= 0.5 mA
Gate Quiescent Voltage
V
GS(Q)
-9
VDC
V
DS
= 48 V, I
D
= 400 mA
Zero Gate Voltage Drain Current
I
DSS
1.2
1.5
1.8
A
V
DS
= 10 V, V
GS
= 0 V
Drain-Source Breakdown Voltage
V
(BR)DSS
100
VDC
V
GS
= 18, I
D
= 10 mA
Forward Transconductance
g
m
140
160
mS
V
DS
= 48 V, I
D
= 250 mA
Case Operating Temperature
T
C
-30
125
C
Screw Torque
1
T
60
in-oz
RF Characteristics
Gain
G
SS
13
15
dB
V
= 48 V, I
DQ
= 500 mA,
f = 1950 MHz
Power Output at 1 dB Compression
P
1dB
10
12
W
V
= 48 V, I
DQ
= 500 mA,
f = 1950 MHz
Power Output at 3 dB Compression
P
3dB
15
17
W
V
= 48 V, I
DQ
= 500 mA,
f = 1950 MHz
Drain Efficiency
2,3
η
40
45
%
V
DD
= 48 V, I
DQ
= 250 mA, f = 1950 MHz
P
OUT
= P
1dB
V
= 48 V, I
= 250 mA,
f
1
= 1950 MHz, f
2
= 1950.1 MHz,
P
OUT
= 10W PEP
V
= 48 V, I
DQ
= 500 mA,
f
1
= 1950 MHz
No damage at all phase angles,
V
= 48 V, I
= 500 mA,
f = 1950 MHz, P
OUT
= 10W CW
Intermodulation Distortion
IMD
3
-31
dBc
Minimum Noise Figure
NF
min
3.1
dB
Output Mismatch Stress
VSWR
10 : 1
Y
Dynamic Characteristics
Input Capacitance
C
DS
2.5
pF
V
DS
= 48 V, V
GS
= -16 V, f = 1 MHz
Output Capacitance
C
GS
1.9
pF
V
DS
= 48 V, V
GS
= -16 V, f = 1 MHz
Reverse Transfer Capacitance
C
GD
0.45
pF
V
DS
= 48 V, V
GS
= -16 V, f = 1 MHz
Notes:
1
Torque for the 440166 package type.
2
Drain Efficiency = P
/ P
3
Power Added Efficiency (PAE) = (P
OUT
- P
IN
) / P
DC
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