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參數(shù)資料
| 型號(hào)： | CRF03 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 1.6 to 1.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 開關(guān)電源的應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | CRF03 |
CRF03
2006-11-07
1
TOSHIBA Fast Recovery Diode Silicon Diffused Type
CRF03
Switching Mode Power Supply Applications
Repetitive peak reverse voltage: V
RRM
= 600 V
Average forward current: I
F (AV)
= 0.7 A
Low forward voltage: V
FM
= 2.0 V (max.)
Very fast reverse-recovery time: t
rr
= 100 ns (max.)
Suitable for compact assembly due to its small surface-mount
package, the “S
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
600
V
Average forward current
I
F(AV)
0.7
(Note 1)
A
Peak one-cycle surge forward current
(non-repetitive)
I
FSM
10 (50 Hz)
A
Junction temperature
T
j
40~150
°C
Storage temperature range
T
stg
40~150
°C
Note 1: Ta = 76°C: Device mounted on a ceramic board
Board size: 50 mm × 50 mm,
Soldering Land size: 2 mm × 2 mm
Board thickness: 0.64 t
Rectangular waveform (
α
= 180°)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
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