參數(shù)資料
型號: CR5AS400-8
廠商: Powerex Power Semiconductors
英文描述: Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts
中文描述: 表面貼裝,相位控制晶閘管5 Amperes/400-600伏特
文件頁數(shù): 2/7頁
文件大小: 105K
代理商: CR5AS400-8
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR5AS
APPLICATION
Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for
autocycle, electric tools, other general purpose control applications, strobe flasher
I
T (AV)
...........................................................................5A
V
DRM
..............................................................400V/600V
I
GT
.........................................................................200
μ
A
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
8
1
8
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
c
=88
°
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
g
Ratings
7.8
5
90
33
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
0.26
8
1. With Gate-to-cathode resistance R
GK
=220
6.5
5.0±0.2
4
2.3
2.3
0.9 MAX
1.0
5
2
1
0.5±0.1
0.5±0.2
0.8
1
1
.
2
3
1
TYPE
NAME
VOLTAGE
CLASS
2
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
2 4
1
3
1
2
3
4
CATHODE
ANODE
GATE
ANODE
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