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參數(shù)資料
| 型號(hào)： | CR05AS-8 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 8-bit microcontroller with accelerated two-clock 80C51 core 8 kB 3 V byte-erasable flash with 512-byte data EEPROM, SOT117-1 (DIP28), Tube |
| 中文描述： | 晶閘管低功率的用途 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | CR05AS-8 |
CR05AS-8
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 2 of 8
Parameter
Symbol
I
T (RMS)
I
T (AV)
Ratings
0.79
0.5
Unit
A
A
Conditions
RMS on-state current
Average on-state current
Commercial frequency, sine half wave
180° conduction, Ta = 57°C
Note2
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Surge on-state current
I
TSM
10
A
I
2
t for fusing
I
2
t
0.4
A
2
s
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Notes: 1. With gate to cathode resistance R
GK
= 1 k
.
Electrical Characteristics
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
Tj
Tstg
—
0.1
0.01
6
6
0.1
W
W
V
V
A
°C
°C
mg
– 40 to +125
– 40 to +125
50
Rated value
Typ.
—
—
Parameter
Symbol
Min.
—
—
Max.
0.1
0.1
Unit
Test conditions
Repetitive peak reverse current
Repetitive peak off-state current
I
RRM
I
DRM
mA
mA
Tj = 125°C, V
RRM
applied
Tj = 125°C, V
DRM
applied,
R
GK
= 1 k
Ta = 25°C, I
TM
= 1.5 A,
instantaneous value
Tj = 25°C, V
D
= 6 V,
I
T
= 0.1 A
Note4
Tj = 125°C, V
D
= 1/2 V
DRM
,
R
GK
= 1 k
Tj = 25°C, V
D
= 6 V,
I
T
= 0.1 A
Note4
Tj = 25°C, V
D
= 12 V,
R
GK
= 1 k
Junction to ambient
Note2
On-state voltage
V
TM
—
—
1.9
V
Gate trigger voltage
V
GT
—
—
0.8
V
Gate non-trigger voltage
V
GD
0.2
—
—
V
Gate trigger current
I
GT
20
—
100
Note3
μ
A
Holding current
I
H
—
—
3
mA
Thermal resistance
Notes: 2. Soldering with ceramic plate (25 mm
×
25 mm
×
t0.7 mm).
3. If special values of I
GT
are required, choose item E from those listed in the table below if possible.
Item
B
E
I
GT
(
μ
A)
20 to 50
20 to 100
The above values do not include the current flowing through the 1 k
resistance between the gate and
cathode.
4. I
GT
, V
GT
measurement circuit.
R
th (j-a)
—
—
70
°C/W
3V
DC
I
GS
I
GT
6V
DC
60
V
GT
2
1
TUT
1k
Switch
R
GK
A3
A2
V1
A1
Switch 1 : I
GT
measurement
Switch 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1k
)
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