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參數(shù)資料
| 型號： | CR05AS-4 |
| 英文描述： | CR05AS-4 CR05AS-8 Datasheet 87K/MAR.20.03 |
| 中文描述： | CR05AS - 4 CR05AS - 8數(shù)據(jù)87K/MAR.20.03 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 85K |
| 代理商： | CR05AS-4 |
Jan.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
8
2.Soldering with ceramic plate (25mm
×
25mm
×
t0.7).
8
3.If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
The above values do not include the current flowing through the 1k
resistance between the gate and cathode.
B
20 ~ 50
Item
I
GT
(
μ
A)
A
1 ~ 30
C
40 ~ 100
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
°
C, V
RRM
applied
T
j
=125
°
C, V
DRM
applied, R
GK
=1k
T
a
=25
°
C, I
TM
=1.5A, instantaneous value
T
a
=25
°
C, V
D
=6V, I
T
=0.1A
8
4
T
j
=125
°
C, V
D
=1/2V
DRM
, R
GK
=1k
T
j
=25
°
C, V
D
=6V, I
T
=0.1A
8
4
T
j
=25
°
C, V
D
=12V, R
GK
=1k
Junction to ambient
8
2
Unit
mA
mA
V
V
V
μ
A
mA
°
C/W
Typ.
—
—
—
—
—
—
—
—
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.2
1
—
—
Max.
0.1
0.1
1.9
0.8
—
100
8
3
3
70
3V
DC
I
GS
I
GT
6V
DC
60
V
GT
2
1
TUT
1k
SWITCH
R
GK
A3
A2
V1
A1
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1k
)
8
4. I
GT
, V
GT
measurement circuit.
PERFORMANCE CURVES
10
0
2 3
5 7 10
1
4
2
2 3
5 7 10
2
4
4
6
8
10
3
1
0
5
7
9
5
0
1
4
2
3
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
T
a
= 25°C
MAXIMUM ON-STATE CHARACTERISTICS
O
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
S
CONDUCTION TIME
(CYCLES AT 60Hz)
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